Hackberry seedling growing method

A technology of hackberry and seeds, which is applied in the field of plant propagation, can solve the problems affecting the survival rate and growth speed of saplings, the high requirements for planting hackberry seedlings, and the waste of sapling resources, so as to achieve the effects of accelerating the growth of hackberry, improving the soil environment, and improving the fertility of cultivated land

Inactive Publication Date: 2016-04-20
遵义市南部新区林盛种植场
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is widely used in landscaping. In landscaping, it is mainly transplanted with hackberry seedlings. The planting requirements of hackberry seedlings are high and difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0019] Example one

[0020] A method for raising seedlings of Hackberry, the method includes the following steps:

[0021] a. Site preparation: Choose deep, fertile, and well-drained sandy loam as the nursery, deep plow 25cm, apply 3000kg soil fertilizer per mu, 20kg urea, and 10kg potassium dihydrogen phosphate;

[0022] b. Seed selection and seed soaking and accelerating germination: select high-quality seeds and soak them in water at a temperature of 15℃ for 7 hours, and then put the seeds in a germination chamber at a temperature of 20℃ for 36 hours;

[0023] c. Sowing: sowing in February every year, using drill sowing, with a pitch of 30 cm, and a sowing amount of 25 kg per mu. Germination is 20 days after sowing. After the seeds germinate, remove the cover in time;

[0024] d. Management: thinning and fixing seedlings when the seedlings are 5cm high, selecting thick seedlings and fixing the seedlings at a distance of 7cm, applying 40kg urea after fixing the seedlings, and applying...

Example Embodiment

[0026] Example two

[0027] A method for raising seedlings of Hackberry, the method includes the following steps:

[0028] a. Site preparation: Choose deep, fertile, and well-drained sandy loam as the nursery, deep plough 25cm, apply 3300kg of soil fertilizer, 25kg of urea, and 13kg of potassium dihydrogen phosphate per mu;

[0029] b. Seed selection and seed soaking and accelerating germination: select high-quality seeds and soak them in water at a temperature of 15℃ for 7 hours, and then put the seeds in a germination chamber at a temperature of 20℃ for 36 hours;

[0030] c. Sowing: sowing in February every year, using drill sowing, with a pitch of 30 cm, and a sowing amount of 25 kg per mu. Germination is 20 days after sowing. After the seeds germinate, remove the cover in time;

[0031] d. Management: When the height of the seedlings is 5cm, thinning and fixing the seedlings are carried out. The thick seedlings are selected and the seedlings are fixed according to the spacing of 7cm...

Example Embodiment

[0033] Example three

[0034] A method for raising seedlings of Hackberry, the method includes the following steps:

[0035] a. Site preparation: Choose deep, fertile, and well-drained sandy loam as the nursery, deep plough 25cm, apply 3500kg of soil fertilizer per mu, 30kg of urea, 15kg of potassium dihydrogen phosphate;

[0036] b. Seed selection and soaking and accelerating germination: select high-quality seeds and soak them in water at a temperature of 20°C for 8 hours, and then put the seeds in a germination chamber at a temperature of 20°C for 36 hours;

[0037] c. Sowing: sowing in February every year, using drill sowing, with a pitch of 30 cm, a sowing amount of 30 kg per mu, germinate 25 days after sowing, and remove the cover in time after the seeds germinate;

[0038] d. Management: When the height of the seedlings is 5cm, thinning and fixing seedlings are carried out. The thick seedlings are selected and fixed at a distance of 7cm. After the seedlings are fixed, 50kg of ure...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a Hackberry seedling growing method, and the method comprises the steps of field selecting and soil working, seed selecting and soaking, germination accelerating, sowing, managing and transplanting. By selecting a planting field and applying a base fertilizer, the demand of Hackberry to elements is satisfied in the maximum way; the rapid and healthy growth can be guaranteed; effects like raising fertility of a cultivated land, improving soil environment, fertilizer and water conservation, and increasing soil organics are provided while improving Hackberry quality; the growth of the Hackberry can be accelerated; and a better greening effect can be obtained.

Description

technical field [0001] The invention relates to the technical field of plant propagation, in particular to a method for growing seedlings of hackberry. Background technique [0002] Hackberry is a deciduous tree of the order Urtica; the bark is smooth and gray; the annual branches are densely hairy. Alternate leaves, long petiole; leaf blade leathery, broadly ovate to narrowly ovate, apex acute to acuminate, base round or broadly cuneate, oblique, margins above the middle part have shallow serrations, three veins, upper glabrous, Sparse hair along veins and axils below. Flowers polygamous (hermaphroditism and unisexuality), leaf axils of current year branches; drupe subglobose, reddish brown; petiole nearly equal in length to petiole; drupe solitary or 2 side by side, subglobose, reddish brown when ripe ; The core has holes and protruding ribs. [0003] The hackberry tree is tall and majestic, with beautiful tree shape, rich greenery and good shade effect. It is widely u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): A01G17/00
Inventor 肖大容
Owner 遵义市南部新区林盛种植场
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap