Stretching seed crystal rod
A technology of seed rods and guide pins, which is applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of high factory building space and general requirements for the accuracy of the crystal out-of-the-box stroke, and achieve the goal of reducing production costs and facilitating operation Effect
Inactive Publication Date: 2016-04-20
上海朗兆机电设备有限公司
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Problems solved by technology
The analysis found that in fact, the accuracy of the crystal growth stroke section is relatively high, while the accuracy requirements of the crystal out of the furnace stroke are average. At present, it is designed according to the high-precision crystal growth stroke, which requires a large-scale linear motion unit to ensure the accuracy. The sapphire single crystal furnace of the EFG process is also very high, and requires a larger workshop space in terms of height
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[0013] The telescopic seed rod of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0014] like figure 1 , figure 2 As shown, the telescopic seed rod of the present invention, the guide pin 2 passes through the pin hole on the seed rod 4 and is installed together, the seed rod 4 is installed in the seed rod 4 cover 1, and the seed rod 4 is placed on the seed rod. Sliding up and down in the middle, due to the effect of guide pin 2 and guide groove 3, it is also regular to ensure that the seed rod 4 slides up and down in the seed rod. Movement acts as traction.
[0015] Assume that the length of the seed rod sleeve 1 is L1; the length of the seed rod 4 is L2; the crystal growth stroke is S1, and the crystal outflow stroke is S2.
[0016] For the equipment currently on the market, the stroke of the high-precision motion unit is S=S1+S2, and the size of the motion unit is also enlarged accordingly to ensure that ...
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The present invention provides a stretching seed crystal rod, which comprises: a seed crystal rod sleeve, wherein the seed crystal rod sleeve is hollow; a guide pin arranged inside the seed crystal rod sleeve; a seed crystal rod arranged in the inner chamber of the seed crystal rod sleeve, wherein one end of the seed crystal rod is connected to the guide pin from the lower portion; and a pulling rope arranged in the inner chamber of the seed crystal rod sleeve, wherein one end of the seed crystal rod is connected to the guide pin from the upper portion, a guide groove is arranged inside the seed crystal rod sleeve and is arranged along the axial direction of the seed crystal rod sleeve, and the pulling rope is a tungsten rope. According to the present invention, the crystal growth process and the crystal discharge-out-of-furnace process are separated, the seed crystal rod can move up and down in the middle through the designed seed crystal rod sleeve, the partial movement precision is not high, and the up and down movement of the seed crystal rod is used when the crystal is discharged out of the furnace; and the seed crystal rod stops at the proper position relative to the seed crystal rod sleeve and is oppositely in the static state to form the integration, the seed crystal rod and the seed crystal rod sleeve perform the high-precision up and down movement, and the high-precision movement can be used for the crystal growth stage.
Description
technical field [0001] The invention relates to the field of sapphire single crystal production, in particular to a telescopic seed rod suitable for a sapphire single crystal furnace. Background technique [0002] In the EFG process method sapphire single crystal furnace, the stroke consists of two parts, the crystal growth stroke and the crystal discharge stroke. When the two are added together, the stroke needs to be very long, so the seed rod is generally very long, so the EFG process method sapphire single crystal furnace are correspondingly high. The analysis found that in fact, the accuracy of the crystal growth stroke section is relatively high, while the accuracy requirements of the crystal out of the furnace stroke are average. At present, it is designed according to the high-precision crystal growth stroke, which requires a large-scale linear motion unit to ensure the accuracy. The sapphire single crystal furnace of the EFG process is also very high, requiring mor...
Claims
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IPC IPC(8): C30B15/34C30B29/20
Inventor 吕立强
Owner 上海朗兆机电设备有限公司