A Measuring Method of Switching Voltage and Extinction Ratio of Parallel MZI Structure

Abstract

The invention discloses a switching voltage and extinction ratio measuring method of a parallel MZI structure. The method is used in a master MZI structure formed by connecting two sub-MZLs in parallel; a first phase modulation electrode (5), a second phase modulation electrode (4) and a third phase modulation electrode (6) are correspondingly respectively manufactured on the light paths of the first sub-MZI, the second sub-MZL and the master MZI; after dynamic phase shift voltage Vtheta (theta is more than or equal to 0 degree and is less than or equal to 90 degrees) is added to the third phase modulation electrode (6), the intensity of the output light of the first sub-MZI (2) and the second sub-MZL (3) is changed by successively changing the voltages of the first phase modulation electrode (5) and the second phase modulation electrode (4); the output power of the master MZI is monitored so as to obtain the switching voltage V1-on and V1-off of the first sub-MZL and the switching voltage V2-on and V2-off of the second sub-MZL; the extinction ratio of the first sub-MZL and the second sub-MZL is obtained through respectively switching on and switching off the first sub-MZL and the second sub-MZL and ensuring that the first sub-MZL and the second sub-MZL are in real time orthogonal. In application of the measuring method of the invention, the efficiency can be improved, and the measuring method is applicable to mass tests in production.

Description

technical field [0001] The invention relates to a testing technology of an optical communication device, in particular to a measurement method of a parallel MZI structure, in particular to a measurement method of a switch voltage and an extinction ratio of a parallel MZI structure, and the invention belongs to the communication field. Background technique [0002] The Mach-Zehnder interferometer (MZI) structure divides the input light into two paths, and the two paths of light are combined after a certain distance of transmission to cause interference. The intensity of the output light can be changed by changing the phase difference of the two transmitted lights of the MZI by applying an electric field. This feature makes the MZI structure widely used in the field of electro-optic modulation devices. For a single MZI structure made of electro-optic materials, if one arm is biased, due to the electro-optic effect, the phase difference of the light transmitted by the two arms ...

AI Technical Summary

Problems solved by technology

However, in the parallel MZI structure, since the initial phase between the two sub-MZIs is random, the interaction of the optical field between the two will also affect the output power of the parent MZI, so the switching voltage and extinction ratio measurements of the parallel MZI structure often more complex

[0004] Especially when the optical structure of the IQ electro-optic modulator is realized by the parallel MZI structure, since the sub-MZI is embedded in the mother MZI, it is more difficult to measure the extinction ratio of each sub-MZI that makes up the mother MZI.

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