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Transmission control transistor and preparation method thereof and CIS chip structure

A technology for controlling transistors and semiconductors, applied in the field of semiconductors to reduce leakage

Inactive Publication Date: 2016-04-27
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the formed pixel unit will still have bright spots, and it is difficult to fundamentally solve the problem of leakage

Method used

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  • Transmission control transistor and preparation method thereof and CIS chip structure
  • Transmission control transistor and preparation method thereof and CIS chip structure
  • Transmission control transistor and preparation method thereof and CIS chip structure

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Embodiment Construction

[0038] The conduction control transistor of the present invention and its preparation method and CIS chip structure will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, it should be understood that those skilled in the art can modify the present invention described here, and The advantageous effects of the invention are still achieved. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0039] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the d...

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Abstract

The invention provides a transmission control transistor and a preparation method thereof and a CIS chip structure. The transmission control transistor comprises a semiconductor substrate, wherein an N-type deep well region and an FD active region are formed in the semiconductor substrate; a P-type shallow doped region is formed in the surface of the N-type deep well region; a shallow channel is formed in the semiconductor substrate and is located between the N-type deep well region and the FD active region; the depth of the shallow channel is greater than that of the P-type shallow doped region; and a transmission control grid oxidation layer and a transmission control grid are formed in the shallow channel. According to the transmission control transistor and the preparation method thereof and the CIS chip structure, the transmission control grid oxidation layer can isolate the P-type doped region and the FD active region, so that electric leakage generated by the P-type doped region is prevented from being transmitted to the FD active region. The semiconductor substrate damaged by ion implantation is etched away to form the transmission control grid oxidation layer, so that electric leakage generated by the damage can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a conduction control transistor, a preparation method thereof, and a CIS chip structure. Background technique [0002] CIS (CMOS Image Sensor) devices are playing an increasingly important role in our daily life. Due to its low cost, low power consumption, and high integration, it has become a mobile phone, notebook computer, digital camera, digital video camera, etc. An essential component in digital products. CIS uses photodiodes to convert optical signals into electrical signals, and then processes and stores the electrical signals as data for graphic restoration. With the continuous improvement of CIS technology, people have higher and higher requirements for the quality of display screens in digital products. In order to obtain high-quality display images, the number of pixels in a CIS device becomes more and more, and at the same time, the size of each pixel become...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
Inventor 殷登平
Owner SEMICON MFG INT (SHANGHAI) CORP
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