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Method and device for assisting metal winding

An auxiliary metal and winding technology, applied in special data processing applications, electrical components, circuits, etc.

Inactive Publication Date: 2019-06-07
GLOBALFOUNDRIES U S INC MALTA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SADP's block masking has a detrimental effect on metal routing due to the rounded inner vertices (or inner corners)

Method used

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  • Method and device for assisting metal winding
  • Method and device for assisting metal winding
  • Method and device for assisting metal winding

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Embodiment Construction

[0051]In the following description, for purposes of explanation, various specific details are set forth to provide a thorough understanding of exemplary embodiments. It is evident, however, that the exemplary embodiments may be practiced without these specific details or with an equivalent arrangement. In other instances, well-known structures and devices are shown in block diagrams in order to avoid unnecessarily obscuring illustrative embodiments. In addition, all numbers expressing quantities, ratios and numerical properties of ingredients, reaction states, etc. in this patent specification and claims are to be understood as being modified by the word "about" in all cases, unless expressly stated otherwise.

[0052] The present invention addresses and resolves the current routing limitations associated with metal routing of SADP manufacturing methods. According to a specific embodiment of the invention, the metal-wrap configuration is legalized by arranging auxiliary metal...

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Abstract

A method and apparatus for an assisted metal routing is disclosed. Embodiments may include: determining an initial block mask having a first inner vertex for forming a metal routing layer of an integrated circuit (IC); adding an assistant metal portion within the metal routing layer; and determining a modified block mask based on the assistant metal portion for forming the metal routing layer.

Description

technical field [0001] The present invention relates to the interconnect routing of high performance cells within an integrated circuit (IC). The invention is particularly applicable to interconnect design and routing beyond the 10 nanometer (nm) technology node. Background technique [0002] The desired device size and pitch have been reduced to the point where traditional single patterning lithography (eg, 193nm wavelength lithography) cannot form a single patterned mask layer with all the features of the final target pattern. Accordingly, device designers and manufacturers have begun to utilize various double patterning techniques, such as self-aligned double patterning (SADP). However, SADP's block masking has an adverse effect on the metal routing because the inner vertices (or inner corners) are rounded. In particular, blocking shading enforces a minimum distance for line ends. [0003] Therefore, there is a need for a method and corresponding apparatus to legalize ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76892G06F30/394G06F30/398
Inventor 袁磊I·林桂宗郁M·拉希德
Owner GLOBALFOUNDRIES U S INC MALTA