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Data writing method, memory storage device and memory control circuit unit

A data writing and control circuit technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as data efficiency reduction, and achieve the effect of improving efficiency

Active Publication Date: 2018-11-09
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this merge operation, the erase operation will be performed on this specific physical erase unit, thereby reducing the efficiency of writing this sequential data multiple times

Method used

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  • Data writing method, memory storage device and memory control circuit unit
  • Data writing method, memory storage device and memory control circuit unit
  • Data writing method, memory storage device and memory control circuit unit

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Experimental program
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Embodiment Construction

[0073] In general, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit). Typically memory storage devices are used with a host system such that the host system can write data to or read data from the memory storage device.

[0074] figure 1 It is a schematic diagram of a host system and a memory storage device according to an exemplary embodiment of the present invention. figure 2 It is a schematic diagram of a computer, an input / output device and a memory storage device according to an exemplary embodiment of the present invention.

[0075] Please refer to figure 1 , the host system 11 generally includes a computer 12 and an input / output (input / output, I / O) device 13 . The computer 12 includes a microprocessor 122 , a random access memory (random access memory, RAM) 124 , a system bus 126 and a data transmission interface 128 . The input / output device 13 includes su...

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PUM

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Abstract

A data writing method, memory storage device and memory control circuit unit. The data writing method includes: writing data to at least a first logical unit and a second logical unit, wherein the data includes first data and second data; storing and filling the first data into at least a first physical unit. Erase unit, and store second data to at least one second physical erase unit; determine whether the remaining space of each second physical erase unit is less than a threshold; if one of the second physical erase units If the remaining space is less than the threshold, at least one fourth physical erasure unit is selected from the idle area, and the second data is written to the second physical erasure unit and the fourth physical erasure unit.

Description

technical field [0001] The invention relates to a data writing method, and in particular to a data writing method, a memory storage device and a memory control circuit unit. Background technique [0002] The rapid growth of digital cameras, mobile phones, and MP3 players has led to a rapid increase in consumer demand for storage media. Because rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., it is most suitable for portable electronic products, such as notebook computer. A solid state drive is a storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] For a flash memory device, when storing a piece of sequential data, in general, the sequential data will be continuously written into multiple physical erase...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G11C16/06
Inventor 辜芳立陈庆儒许登钧简嘉宏
Owner PHISON ELECTRONICS