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Orthogonal combination mask method for preparing material chip

A chip and mask technology, applied in the field of materials, can solve the problems of inconsistent actual concentration, reduced chip area utilization, precise control of angle rotation, etc., to achieve the effect of fast screening efficiency, high utilization rate, and quasi-continuous element concentration

Active Publication Date: 2016-05-18
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This mask strategy can solve the multi-factor multi-concentration material chip preparation problem to a certain extent, but the disadvantages are also very obvious.
As K increases, the difference between the radius of the center circle and the radius of the circumscribed circle of the (K+1) fractal circle becomes larger and larger, and the utilization rate of the chip area decreases rapidly; the fractal strategy deposits the same element at the same concentration level on each sample, which can only guarantee the deposition The thickness is consistent, but the actual concentration is not consistent; in addition, the fractal mask preparation process is complicated and the angle rotation during deposition needs precise control

Method used

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  • Orthogonal combination mask method for preparing material chip
  • Orthogonal combination mask method for preparing material chip
  • Orthogonal combination mask method for preparing material chip

Examples

Experimental program
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Effect test

Embodiment 1

[0024] To prepare alkaline earth orthosilicate Me 2 SiO 4 : Eu 2+ 0.01 (Me=Be, Mg, Ca, Sr, Ba) Orthogonal combined material chip (5 factors and 5 concentration levels) as an example. The 5 concentration levels of each alkaline earth ion are achieved through 5 deposition thicknesses, namely 0.2nm, 0.4nm, 0.6nm, 0.8nm, and 1nm (the element concentration is usually controlled by the element deposition thickness in the combined method).

[0025] Orthogonal table L 25 (5 6 ) is improved 5*(5-1) orthogonal table (such as figure 1 ): take L 25 (5 6 ) is the female parent (excluding the first column and the first 5 rows in the table, and the remaining 5*4 (columns 2 to 6, rows 6 to 25) in the table at this time. SiO 2 The layer deposition thickness is fixed at 1.5nm (taking the atomic concentration of Si as the standard, that is, the atomic concentration of Si is 1), prepared according to the improved orthogonal table 5*(5-1), and the available 20 Me 2 SiO 4 : Eu 2+ 0.01 (...

Embodiment 2

[0029] To prepare perovskite GdAlO 3 :RE 0.1 (RE=Eu, Pr, Sm) Orthogonal combined material chip (3 factors 3 concentration levels) as an example. The three concentration levels of each rare earth ion are achieved through three deposition thicknesses, namely 0nm, 0.5nm, and 1nm (the element concentration is usually controlled by the element deposition thickness in the combined method).

[0030] Orthogonal table L 9 (3 4 ) is improved 3*(3-1) orthogonal table for the parent (such as Figure 4 ): take L 9 (3 4 ) is the female parent (excluding the first column and the first 3 rows in the table, and the remaining 3*2 (columns 2 to 4, rows 4 to 9) in the table at this time. GdAlO 3 The layer deposition thickness is fixed at 15nm (taking the atomic concentration of Gd as the standard, that is, the atomic concentration of Gd is 1), and the preparation is carried out according to the improved orthogonal table 3*(3-1), and the available 6 GdAlO 3 :RE 0.1 (RE=Eu, Pr, Sm) samples....

Embodiment 3

[0034] to prepare MeTiO 3 (Me=Be, Mg, Ca, Sr, Ba, Fe) Orthogonal combined material chip (6 factors and 3 concentration levels) as an example. The three concentration levels of each metal ion are achieved by three deposition thicknesses, namely 0nm, 0.5nm, and 1nm (the element concentration is usually controlled by the element deposition thickness in the combined method).

[0035] Orthogonal table L 18 (3 7 ) is an improved 3*(6-1) orthogonal table for the parent (such as Figure 7 ): take L 18 (3 7 ) is the female parent (excluding the first column and the first 3 rows in the table, and the remaining 3*5 (columns 2-7, rows 4-18) in the table at this time. TiO 2 The layer deposition thickness is fixed at 3nm (taking the atomic concentration of Ti as the standard, that is, the atomic concentration of Ti is 1), prepared according to the improved orthogonal table 3*(6-1), and 15 MeTiO can be obtained 3 (Me=Be, Mg, Ca, Sr, Ba, Fe) samples. In these 15 samples, not only the s...

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Abstract

The invention provides an orthogonal combination mask method for preparing a material chip. If the material chip of n elements and K concentration levels is prepared, K strip-shaped basic modules K1, K2, ...Kj..., KK are engraved according to the number K of the concentration levels; the K basic modules are arranged in the longitudinal direction in different orders and spliced into K square module; then the square modules are spliced into n single element deposition masks according to a K*(N-1) or K*(K-1) orthogonal table; when a single element is deposited, each time when one concentration level is deposited, the masks move by one grid, and after the masks move K times, deposition of K concentration levels is completed; after K*n times of deposition, K*(n-1) or K*(K-1) samples are finally obtained; each concentration level of a single element occurs n-1 or (K-1) times, and doping elements and the concentration levels thereof can be obtained through mean value analysis and range analysis. The orthogonal combination mask method has the advantages of synchronous screening with elements being separated and element concentration being accurate and continuous; the utilization rate of area of the material chip is higher, and screening efficiency is higher.

Description

technical field [0001] The invention belongs to the technical field of materials. The method relates to mask strategy design and corresponding mask engraving in solid-state combined sieve. Background technique [0002] With the development of science and technology, people's requirements for material performance are getting higher and higher. The material performance mainly depends on its composition and structure, (including known or unknown) materials with different properties. The traditional material research adopts a serial stir-frying synthesis method, which is time-consuming, expensive and lacks regularity. Since 1995, a parallel integrated material synthesis technology has been developed, which is called a material chip. The material chip was recommended by Science magazine as one of the world's top ten scientific and technological advances in 1998. The so-called material chip is essentially a high-density material library array. By using the parallel combined ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/68
Inventor 罗岚郭锐熊志华
Owner NANCHANG UNIV