Detection circuit and trimming method of embedded flash memory, embedded flash memory

Abstract

The invention discloses a detection circuit and fine adjustment method of an Eflash and the Eflash. The detection circuit of the Eflash is suitable for detecting the programming voltage of the Eflash in the programming state or the erasing voltage of the Eflash in the erasing stage. The detection circuit comprises a test channel selection circuit and a voltage comparison circuit, wherein the test channel selection circuit is coupled with a fixed test point, and an enable signal is input to the test channel selection circuit; the voltage comparison circuit is coupled with the test channel selection circuit. When the enable signal is in a first logic level, the fixed test point detects the programming voltage or the erasing voltage through the test channel selection circuit; when the enable signal is in a second logic level different from the first logic level, the fixed test point is coupled to the voltage comparison circuit through the test channel selection circuit, and the programming voltage or the erasing voltage is compared with the reference voltage on the fixed test point through the voltage comparison circuit to generate a detection result; the detection result is suitable for being transmitted to a fine adjustment circuit. By means of the detection circuit and fine adjustment method of the Eflash and the Eflash, the detection time of the programming voltage or the detection time of the erasing voltage can be greatly shortened.

Description

technical field [0001] The invention relates to embedded flash memory technology, in particular to a detection circuit and fine-tuning method of embedded flash memory, and embedded flash memory. Background technique [0002] Flash memory (Flash) is a long-life non-volatile memory, which can still maintain the stored data information in the case of power failure. Because it can still save data when power is turned off, flash memory is usually used to save setting information. Such as saving data in the computer's plate program, personal digital assistant, digital camera, etc. Flash memory can also be regarded as a variant of Electrically Erasable Programmable Read-Only Memory (EEPROM), and unlike EEPROM, EEPROM can be deleted and rewritten at the byte level rather than the entire Chip erase and write, and most chips of flash memory need block erase. Embedded flash memory (Eflash) is a flash memory embedded in an embedded chip. In the design, there is no need to add memory c...

AI Technical Summary

Problems solved by technology

In the prior art, fixed test points are generally used to directly detect the programming voltage or erasing voltage. The detection process is slow and the detection time is long, which greatly increases the test cost.

[0004] Therefore, the embedded flash memory of the prior art is faced with the problem that the detection time of the programming voltage or the erasing voltage is relatively long

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