A kind of preparation method of y3al5o12 coating applied to aluminum-based substrate

Abstract

The invention relates to the technical field of anticorrosive treatment of inner surfaces of technological chambers for semiconductor etching, in particular to a preparation method of a Y3Al5O12 coating applied to an aluminum-based base material. The preparation method comprises the following steps that Y3Al5O12 powder is selected; a chromium carbide or chromium nitride coating is sprayed to the surface of the aluminum-based base material to be sprayed through plasma spraying equipment; and Y3Al5O12 is sprayed to the surface of chromium carbide or chromium nitride coating through the plasma spraying equipment, so that the Y3Al5O12 coating is prepared. According to the preparation method of the Y3Al5O12 coating applied to the aluminum-based base material, the bonding phase of the chromium carbide or chromium nitride is added between the aluminum-based base material and the Y3Al5O12 coating, a good transition function between the Y3Al5O12 coating and the aluminum-based base material can be achieved, interfacial stress of the Y3Al5O12 coating and the aluminum-based base material is effectively reduced, and the interface bonding strength is improved.

Description

technical field [0001] The invention relates to the technical field of anti-corrosion treatment of the inner surface of a semiconductor etching process chamber, in particular to a Y 3 Al 5 o 12 Coating preparation method. Background technique [0002] At present, the low-temperature plasma microfabrication method is the key technology for micro-nano processing of materials. It is the basis of preparation technologies such as microelectronics, optoelectronics, micromechanics, and micro-optics. One of the processes is completed by means of plasma processing, such as plasma film deposition, plasma etching, and plasma deglue. Among them, plasma etching is one of the most critical processes, and it is an irreplaceable process to realize the high-fidelity transfer of micro-patterns in VLSI production from photolithographic templates to silicon wafers. [0003] During the etching process, etching gas (mainly F-based and Cl-based gases) is introduced into the reaction chamber th...

AI Technical Summary

Problems solved by technology

[0007] However, due to the thermal expansion coefficient of aluminum-based metals (18.8~23.6×10 -6 K -1 ) and Y 3 Al 5 o 12 The coefficient of thermal expansion (6.9×10 -6 K -1 ) is quite different, it is easy to generate thermal stress between the substrate and the coating during the spraying process, resulting in cracks between the coating and the substrate or even peeling off of the coating

Images