Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method for Co2Val-based heterojunction with semi-metal characteristic

A heterojunction and half-metal technology, applied in the manufacture/processing of electromagnetic devices, parts of electromagnetic equipment, etc., can solve problems such as backward methods

Inactive Publication Date: 2016-06-01
XUCHANG UNIV
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the existing process method is backward and needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for Co2Val-based heterojunction with semi-metal characteristic
  • Preparation method for Co2Val-based heterojunction with semi-metal characteristic
  • Preparation method for Co2Val-based heterojunction with semi-metal characteristic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] In order to facilitate understanding of the present invention, the present invention will be described in more detail below with reference to the accompanying drawings and specific embodiments. Preferred embodiments of the present invention are given in this specification and the accompanying drawings, however, the present invention may be implemented in many different forms and is not limited to the embodiments described in this specification. Rather, these embodiments are provided so that a thorough and complete understanding of the present disclosure is provided.

[0019] It should be noted that, when an element is fixed to another element, it includes that the element is directly fixed to the other element, or the element is fixed to the other element through at least one intermediate other element. When an element is connected to another element, it includes connecting the element directly to the other element or connecting the element to the other element through ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method for a Co2Val-based heterojunction with semi-metal characteristic. The preparation method comprises the following steps of 1, building an interface structure, 25 layers of Co2VAl and 13 layers of PbS are considered to build four symmetric heterojunctions; 2, carrying out structural optimization on the four heterojunctions, allowing the positions of atoms in five atom layers nearest to the interfaces in the two materials of the Co2VAl and the PbS to be relaxed and other atom positions to be fixed; 3, respectively calculating interfacial energy sizes of the four interfaces into a list and comparing to acquire a heterojunction with most stable structure; 4, calculating physical quantity such as state density, magnetic moment and spin polarization of the optimized heterojunction; 5, analyzing the state density, the magnetic moment, the spin polarization and the like of the interface structure; and 6, acquiring the semi-metal heterojunction with 100% spin polarization and stable structure.

Description

technical field [0001] The present invention relates to Co-based 2 Preparation method of heterojunction with VAl having semi-metallic properties. Background technique [0002] In recent years, due to the potential applications in spintronic devices, the search for semi-metallic materials, that is, materials in which one spin channel is a metal and the other channel is an insulator or semiconductor, has become the work of many researchers with great enthusiasm. Among the many semi-metallic ferromagnets discovered experimentally and theoretically, Heusler alloys are considered to be the most likely because of their high magnetic moment, high Curie temperature and lattice constants that match common semiconductors. Materials for spintronic devices. It is well known that most semi-metallic ferromagnets are made into thin films or multilayers and used in practical spintronic devices. Therefore, how to improve the efficiency of spin injection from ferromagnets to semiconductors...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/02H10N50/01H10N50/80
CPCH10N50/80H10N50/01
Inventor 韩红培
Owner XUCHANG UNIV