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Storage device

A storage device and storage unit technology, applied in the field of electronics, can solve problems such as reducing the transmission rate of transmission lines, and achieve the effect of ensuring impedance consistency and transmission rate

Active Publication Date: 2016-06-15
LENOVO (BEIJING) LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present invention provides a storage device, which is used to solve the technical problem of reducing the transmission rate of the transmission line in the interface of the storage device in the prior art, and achieve the technical effect of ensuring the transmission rate of the transmission line

Method used

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Embodiment 1

[0046] Please refer to figure 1 , is a schematic structural diagram of a storage device according to a first preferred embodiment of the present application. The storage device is described in detail below.

[0047] A storage device comprising:

[0048] a first circuit board 10;

[0049] a storage unit 11 arranged on the first circuit board 10;

[0050] A connection structure 12, arranged on the first circuit board 10;

[0051] a transmission line 13, arranged between the storage unit 11 and the connection structure 12;

[0052] Wherein, the transmission line 13 is provided with an inductance element and a resistance element connected in series with the inductance element for adjusting the impedance of the transmission line 13 so as to maximize the transmission rate of the transmission line 13 .

[0053]The storage device in the embodiment of the present application can be designed as a U disk, through the connection structure 12 and other electronic equipment, such as: a...

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Abstract

The present invention discloses a storage device. The storage device comprises a first circuit board; a memory cell disposed on the first circuit board; a connecting structure disposed on the first circuit board; and a transmission line disposed between the memory cell and the connecting structure. The transmission line is provided with an inductance element and a resistance element in series with the inductance element for adjusting impedance of the transmission line so as to maximize transmission rate of the transmission line. Through the technical scheme, the technical problem that in the prior art, the transmission rate of the transmission line may be reduced by an interface of the storage device is solved.

Description

technical field [0001] The present invention relates to the field of electronic technology, in particular to a storage device. Background technique [0002] With the continuous development of science and technology, various electronic devices, such as smart phones, tablet computers or notebook computers, continue to develop, and the functions of the electronic devices are also continuously enriched. [0003] While the functions of electronic devices are continuously enriched, the requirements for the memory capacity of electronic devices and the transmission rate of memory chips are also increasing. The memory chips in the prior art are all welded on the circuit board, and then connected to other main boards through the interface composed of metal patches or conductive pins, but the above-mentioned interface is easy to cause the transmission line used to connect the memory chip and the interface. drop in transfer rate. [0004] In the process of implementing the technical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F13/16
CPCG06F13/1657G06F13/1668
Inventor 石彬
Owner LENOVO (BEIJING) LTD
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