A kind of preparation method of core-shell coated cerium oxide-silicon oxide composite abrasive grain

Abstract

The invention provides a preparation method of shell-core coated cerium oxide-silicon oxide composite abrasive grains. The preparation method includes the steps of (1), preparing silicon oxide suspension liquid from commercially available silicon oxide polishing slurry, and controlling a pH value of the silicon oxide suspension liquid as 10-10.5 during preparation; (2), preparing a cerium salt solution by taking cerium nitrate as a cerium salt and HMT as a precipitant; (3), slowly dropwise adding the cerium salt solution into the silicon oxide suspension liquid at a constant speed so as to obtain a mixed solution; (4), subjecting the mixed solution to oil-bath heating and heating reflux to obtain dark brown suspension liquid, cooling the dark brown suspension liquid to the room temperature and ageing until the cooled dark brown suspension liquid layers; (5), subjecting the layered dark brown suspension liquid to centrifugal separation and washing to obtain dark brown precipitate; (6), drying, grinding, roasting and comminuting the dark brown precipitate. The preparation method of the shell-core coated cerium oxide-silicon oxide composite abrasive grains solves the problems that the shell-core coated cerium oxide-silicon oxide composite abrasive grains prepared by an existing method are low in cerium oxide coating degree and unsatisfactory in coating effect.

Description

technical field [0001] The invention relates to the technical field of surface treatment, in particular to the field of chemical mechanical polishing, and specifically relates to a preparation method of a core-shell-coated cerium oxide-silicon oxide composite abrasive grain. Background technique [0002] In recent years, semiconductor materials have been widely used in the fields of laser, magnetic memory and large-scale integrated circuits, which makes semiconductor materials, as a new industry, occupy an important position in the fields of material science, high technology and national economy. , and this trend continues to develop. [0003] In order to improve the performance of electronic devices, wafers are required to have ultra-high flatness, ultra-smoothness, no damage, complete crystal lattice and no crystal orientation deviation. Microscopic defects on the wafer surface can affect the surface properties and even the crystalline structure, thereby reducing the perf...

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Problems solved by technology

[0008] In view of the above problems, the present invention provides a method for preparing a core-shell-coated ceria-silicon oxide composite abrasive grain, which can solve the problem of the presence of a shell-core-coated ceria-silicon oxide composite abrasive grain prepared by the existing method. The problem of low coating degree of cerium oxide and unsatisfactory coating effect

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