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Foam diamond skeleton reinforced copper matrix composite material and preparation method

A technology of copper-based composite materials and foam skeleton, which is applied in the field of composite material preparation, can solve the problems of difficulty in finely controlling the connectivity of three-dimensional porous skeleton, multiple processing procedures, and complicated process flow, and achieve excellent continuous thermal conductivity and electrical conductivity and the effect of improving the mechanical strength

Active Publication Date: 2017-10-31
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the traditional mechanical processing method is multi-dimensional processing, with many processing steps and high cost
In addition, mechanical processing is restricted by traditional mechanical processing methods and equipment, and it is difficult to finely control the internal pore size and connectivity of the three-dimensional porous framework.
Using the method of metal wire weaving, there are gaps in the three-dimensional pores, and the process is complicated.

Method used

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  • Foam diamond skeleton reinforced copper matrix composite material and preparation method
  • Foam diamond skeleton reinforced copper matrix composite material and preparation method
  • Foam diamond skeleton reinforced copper matrix composite material and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0048] Foamed diamond skeleton reinforced copper-based composite material. In this example, foamed copper with a pore size of 0.25 mm is used as the substrate. The foamed diamond reinforcement accounts for 20% of the volume fraction of the composite material. After cleaning, adopt magnetron sputtering technology to deposit a molybdenum film with a thickness of 50nm on the surface of the copper foam three-dimensional network skeleton as an intermediate transition layer according to step (2); then obtain a large amount of nanocrystals and microcrystals embedded in the middle of the mesh according to step (3). Foam skeleton substrate of diamond particles; (4) hot wire CVD is used to deposit diamond film, deposition process parameters: hot wire distance 6mm, substrate temperature 850°C, hot wire temperature 2200°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, and the thickness of the diamond film is 70 μm by adjusting the deposition time, that is, the three-d...

Embodiment 2

[0050] Foamed diamond / graphene skeleton reinforced copper matrix composite material. In this example, nickel foam with a pore size of 0.4mm is used as the substrate. The foamed diamond reinforcement accounts for 30% of the volume fraction of the composite material. The substrate is cleaned. Firstly, the surface of the nickel foam three-dimensional network substrate is pretreated according to step (1), and then a chromium film with a thickness of 150nm is deposited on the surface of the nickel foam three-dimensional network skeleton by step (2) as an intermediate. Transition layer; then according to step (3) obtain the foam skeleton substrate inlaid with a large number of nanocrystals and microcrystalline diamond particles in the middle of the mesh; (4) adopt hot wire CVD to deposit diamond film, deposition process parameters: hot wire distance 6mm, substrate temperature 900°C, hot wire temperature 2200°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, the ...

Embodiment 3

[0052]Foamed diamond / carbon nanotube skeleton reinforced copper matrix composite material. In this example, foamed tungsten with a pore size of 1.2mm is used as the substrate. The foamed diamond reinforcement accounts for 50% of the volume fraction of the composite material. The substrate is cleaned, and then the intermediate transition layer is not added, and the in-situ growth diamond is directly utilized by chemical vapor deposition; then according to step (3) to obtain a foam skeleton substrate inlaid with a large amount of nanocrystalline and microcrystalline diamond particles in the middle of the mesh; according to the step ( 4) The diamond film is deposited by hot wire CVD, the deposition process parameters are: hot wire distance 6mm, substrate temperature 900°C, hot wire temperature 2300°C, deposition pressure 3KPa, CH4 / H2 volume flow ratio 1:99, control deposition time to obtain diamond film The thickness is 400 μm, that is, the three-dimensional network skeleton of th...

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Abstract

The invention provides a foam diamond skeleton reinforced copper-based composite and a preparation method thereof. The foam diamond skeleton reinforced copper-based composite consists of a foam substrate, a diamond reinforced layer and a matrix material, wherein the foam substrate is made of foam metal, or foamed ceramics or foamy carbon; the base material is made of copper and copper alloy; and the diamond reinforced layer is made of diamond, or diamond and grapheme or / and carbon nanotubes. According to the foam diamond skeleton reinforced copper-based composite, reinforcing phases and matrix phases are kept in continuous distribution in a three-dimensional space, and diamond and the matrix form network interpenetrating configuration, so that obvious effects on material thermal property from a compound interface can be weakened, not only are the ductility and the toughness of the metal matrix in the composite not reduced, but also the reinforcing phases are integrated, the heat conduction efficiency of the reinforced body is given into play to the utmost extent, the heat conductivity, the electric conductivity and the mechanical strength of the composite are greatly improved in comparison with traditional composites, and accordingly, the foam diamond skeleton reinforced copper-based composite is a potential novel multifunctional composite.

Description

technical field [0001] The invention discloses a foamed diamond skeleton-reinforced copper-based composite material and a preparation method thereof, belonging to the technical field of composite material preparation. Background technique [0002] With the rapid development of information technology, the integration of electronic and semiconductor devices continues to increase (such as Intel quad-core processor i7 in 270mm 2 About 371 million transistors are integrated on the chip), which makes the power density of the device more and more large, and the calorific value rises rapidly. The temperature rise caused by the untimely heat dissipation will seriously affect the working efficiency and service life of the device. If the thermal expansion coefficient does not match between the electronic packaging material and the semiconductor chip, the thermal stress generated during the cyclic operation of the device will easily lead to thermal fatigue failure of the device. In add...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C1/08C22C9/00
CPCC22C1/08C22C9/00
Inventor 魏秋平周科朝马莉余志明张龙
Owner CENT SOUTH UNIV
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