Power supply management apparatus
A technology of a power management device and a power management chip, applied in electrical program control, program control in sequence/logic controllers, etc., can solve problems such as affecting user experience, not allowing independent physical buttons to be retained, and unable to remove batteries, etc. The effect of reducing hardware costs
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Embodiment 1
[0028] image 3 It is the circuit diagram of the power management device described in Embodiment 1 of the present invention. This embodiment can be applied to the situation that when the mobile terminal crashes, press and hold the power button to realize the crash exit situation, such as image 3 As shown, the power management device described in this embodiment includes:
[0029] Power management chip, first diode D1, voltage stabilizing unit D2, first transistor Q1, second transistor Q2, capacitor C1, switch K1, first resistor R1, second resistor R2, third resistor R3, fourth resistor R4, the fifth resistor R5;
[0030] The power-on pin of the power management chip, the second end of the third resistor R3, the first end of the fifth resistor R5, and the second end of the second transistor Q2 are connected;
[0031] The power state maintenance pin of the power management chip, the first end of the fourth resistor R4, and the second end of the first transistor Q1 are connect...
Embodiment 2
[0059] On the basis of Embodiment 1, the power management device described in this embodiment further defines the resistors and transistors of the power management device described in Embodiment 1, specifically including: the first resistor R1 is 2M ohms Resistors, the second resistor R2 is a 10 ohm resistor, the third resistor R3 and the fifth resistor R5 are 2K ohm resistors, the fourth resistor R4 is a 10 kohm resistor, the capacitor C1 is a 22uF (microfarad) capacitor, and the voltage stabilizing unit D2 The voltage is 3 volts, preferably a zener diode with a voltage of 3 volts. Both the first transistor Q1 and the second transistor Q2 are transistors with a conduction voltage greater than 0.5 volts and a conduction current less than 100nA (nanoampere). Both the first transistor Q1 and the second transistor Q2 are N-type metal-oxide semiconductor field-effect transistors, the voltage VGS between the gate and the source of the N-type metal-oxide semiconductor field-effect tr...
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