semiconductor device

Abstract

The invention discloses a semiconductor device, which includes a first insulating layer and a second insulating layer, which are sequentially arranged on a substrate, wherein the substrate has a central region. The first winding part and the second winding part are arranged in the second insulation layer and surround the central area, and respectively include a first conductor layer, a second conductor layer and a third conductor layer arranged from the inside to the outside, and the first conductor layer The layer, the second conductive layer and the third conductive layer respectively have first ends and second ends, wherein the first ends of the first conductive layers are coupled to each other. The coupling part is disposed in the first insulating layer and the second insulating layer between the first winding part and the second winding part, and the coupling part includes a first pair of connection layers that alternately connect the first conductor layer and the second The second end of the wire layer. The second pair of connection layers alternately connects the first ends of the second conductor layer and the third conductor layer. There are multiple identical or different spacings between the first conductor layer and the adjacent second conductor layer, and at least one of the spacings is greater than the spacing between the second conductor layer and the adjacent third conductor layer.

Description

[0001] This application is a divisional application of an invention patent with the application number 201310357443.1, the application date is August 16, 2013, and the invention name is "semiconductor device". technical field [0002] The present invention relates to a semiconductor device, in particular to a semiconductor device having an inductance element. Background technique [0003] Many digital / analog components and circuits have been successfully applied to semiconductor integrated circuits. The above components include passive components such as resistors, capacitors or inductors. A typical semiconductor integrated circuit includes a silicon substrate. More than one dielectric layer is disposed on the base, and more than one metal layer is disposed in the dielectric layer. These metal layers can be used to form on-chip components, such as on-chip inductors, through the current semiconductor manufacturing process technology. [0004] The chip built-in inductance e...

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Problems solved by technology

[0006] However, since the position of the connection branch structure in the innermost circle of the metal layer is limited by the side width of the innermost circle of the metal layer, the existing structure of the on-chip inductance element is difficult to meet the needs of various circuit designs

Furthermore, when the position of the branch structure is changed, the first inductance value, the second inductance value and the coupling coefficient will be changed at the same time, making it difficult to adjust the circuit parameters of the on-chip inductance element

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