A high-voltage SIC device overcurrent detection and protection circuit, device and method

Abstract

The invention discloses a high-voltage SIC device over-current detection and protection circuit, device and method. The High-voltage SIC device over-current detection and protection device comprises a high-voltage SIC device over-current detection circuit and a high-voltage SIC device over-current protection circuit; the high-voltage SIC device over-current protection circuit comprises a drain over-current detection element connected with a to-be-detected SIC device and a first current limiting element connected with an output end of a drive circuit of the to-be-detected SIC device; one end of the second current limiting element is sequentially connected with a third current limiting element, a blocking element and a triode collector electrode; one end of the second current limiting element is sequentially connected with a voltage stabilizing tube, a fourth current limiting element and a triode base electrode; a power storing element is arranged between the triode base electrode and a triode emitting electrode; the high-voltage SIC device over-current protection circuit comprises a switch logic signal generating unit connected with the high-voltage SIC device over-current detection circuit; and the switch logic signal generating unit drives connection and disconnection of the SIC device through the driving circuit. The SIC device over-current detection and protection circuit is clear in structure and easy to realize.

Description

technical field [0001] The invention relates to the field of drive protection of power electronic switching devices, in particular to a high-voltage SIC device overcurrent detection and protection circuit, device and method. Background technique [0002] Silicon carbide (SIC) MOSFET / IGBT has high-voltage and high-temperature characteristics. With the acceleration of commercialization in recent years, silicon carbide devices have attracted more and more attention from the industry. Compared with traditional silicon-based devices, SIC MOSFET / IGBT has ideal gate insulation characteristics, faster switching performance, lower switching loss, higher stability, and higher voltage and high temperature resistance. There are differences in driving characteristics between SIC MOSFET / IGBT and traditional silicon-based MOSFET / IGBT, and there are special requirements for its driving in use. The recommended turn-on voltage of SIC MOSFET / IGBT is above +18V to ensure the minimum on-state r...

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Problems solved by technology

[0003] At present, the price of commercial silicon carbide devices is relatively high. In practice, due to aging and damage of devices, control and drive circuit failures or interference, etc., misoperation, wrong connection of output lines or insulation damage, etc. form short circuits, short circuits at the output end to ground, bridge arms, etc. Short circuit, etc. cause the current flowing through the SIC MOSFET / IGBT to be far greater than its safety threshold. If there is no effective protection or the protection is too slow, it will affect the service life of the silicon carbide device or even burn the device

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