Desaturation protection improved circuit suitable for SiC MOSFET, design method and application

Abstract

The invention belongs to the technical field of circuit design, and discloses a desaturation protection improved circuit suitable for a SiC MOSFET, a design method and application, and the desaturation protection improved circuit suitable for the SiC MOSFET comprises a typical desaturation protection circuit topology, a logic processing circuit used for distinguishing FUL faults, and a blanking capacitor charging branch circuit additionally led out from a MOSFET drain electrode. The design method of the desaturation protection improved circuit suitable for the SiC MOSFET comprises the steps that a typical desaturation protection circuit topology is added with a logic processing circuit used for distinguishing FUL faults, then a blanking capacitor charging branch circuit additionally led out from an MOSFET drain electrode is added, and HSF fault processing is accelerated. According to the method, the anti-interference performance is not sacrificed while the response speed is increased, the optimization range is relatively comprehensive, improvement is achieved when two different short-circuit faults are processed, and rapid and reliable circuit protection can be achieved.

Description

technical field [0001] The invention belongs to the technical field of circuit design, and in particular relates to an improved circuit for desaturation protection suitable for SiC MOSFET, a design method and application. Background technique [0002] In recent years, the main development trend of power electronic devices is to continuously pursue higher power density and try to work in a higher temperature environment to meet the needs of various emerging applications, such as electric vehicles and wind power systems. Thanks to advances in material science and production processes, wide-bandgap semiconductor devices such as SiC MOSFETs are beginning to find application in the industry. Compared with traditional Si-based devices, SiC MOSFETs have many advantages, such as high breakdown field strength, high thermal conductivity and high forbidden band width. Therefore, various wide-bandgap semiconductor devices represented by SiC MOSFETs will gradually replace various Si-bas...

AI Technical Summary

Problems solved by technology

[0010] (1) SiC MOSFET is limited by a relatively small chip area, and the short-circuit withstand time is significantly shorter than that of Si-based devices, only 2μ s However, the design requirements for SiC MOSFET protection circuits are more stringent, and the response speed of some existing protection circuits cannot fully meet the requirements

[0011] (2) The existing circuit design for SiC MOSFET protection is relatively complex, and the anti-interference performance of the circuit is affected to a certain extent, or the optimization effect is only effective for a single fault type, etc., and there is room for improvement.

[0012] (3) In the existing optimization strategies for desaturation protection schemes, the circuit structure is relatively complex and the cost is relatively high; at the same time, the types of faults that can be handled are limited, or the anti-interference performance will also be affected, etc.

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