Method and apparatus for manufacturing semiconductor devices
A manufacturing method and semiconductor technology, which are applied in the field of semiconductor device manufacturing and semiconductor manufacturing equipment, can solve problems such as lowering of the dissolution rate of the adhesive layer, peeling off of the element substrate, and reduction of the effective area of the peripheral portion of the semiconductor substrate, etc.
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no. 1 approach
[0025] Figure 1 to Figure 6 This is a diagram showing the first embodiment. Hereinafter, as for the first substrate, the processing steps of the semiconductor substrate 1 subjected to the steps of back grinding and TSV (through silicon via) formation will be described.
[0026] figure 1 (a) shows a cross section of an outer peripheral portion of a semiconductor substrate 1 such as a silicon substrate as a first substrate. The element forming portion 2 on the surface of the semiconductor substrate 1 other than the peripheral portion is formed like figure 1 As shown in (b), it is formed in a state including a plurality of chips having semiconductor circuits including semiconductor elements. When the step of embedding the semiconductor circuit in the element formation portion 2 of the semiconductor substrate 1 is completed, next, the peripheral portion on the surface (upper surface) side of the semiconductor substrate 1 is subjected to grinding treatment (edge trimming treat...
no. 2 approach
[0044] Figure 7 ~ Figure 12 Shows the second embodiment. Hereinafter, portions different from those of the first embodiment will be described.
[0045] In this embodiment, the semiconductor substrate 1 is attached to the support substrate 4 and the back surface processing of the semiconductor substrate 1 is performed similarly to the first embodiment. Thereafter, before attaching patch 6, something like Figure 7 Dividing processing is performed on the back surface of the element formation portion 2 of the semiconductor substrate 1 as shown. In the chip dividing process, the element forming portion 2 is cut and processed to a depth reaching the peeling layer 3 . As a result, chip dividing grooves 2 a are formed in a grid pattern at a predetermined depth on the rear surface of the element formation portion 2 of the semiconductor substrate 1 , and the semiconductor circuit is bonded to the release layer 3 while being separated by the chip.
[0046] Next, something like Fi...
no. 3 approach
[0060] Figure 13 The third embodiment is shown, and an example different from the ultraviolet irradiation device used in the first embodiment is shown. The ultraviolet irradiation device 20 is a device that irradiates ultraviolet rays similarly to the ultraviolet irradiation device 10, and the substrate to be irradiated is in a state in which the element formation part 2 side of the semiconductor substrate 1 is attached to the support substrate 4, and the The chip 6 is attached to the back side of the element forming part 2 and held by the ring frame 7 .
[0061] The stage 21 on which the ring-shaped frame 7 and the patch 6 are placed is a disk-shaped stage containing a light-shielding material except for the light-transmitting portion 21a, and is configured such that its circumference is held, for example. The light-transmitting part 21a of the stage 21 is provided in circular shape corresponding to the part 6a which irradiates the ultraviolet-ray to the annular frame 7 and...
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