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Manufacturing method of semiconductor device and semiconductor manufacturing device

A manufacturing method and a semiconductor technology, which are applied in the field of semiconductor device manufacturing and semiconductor manufacturing device, can solve problems such as lowering of adhesive layer dissolution rate, peeling off of element substrate, and lower productivity.

Active Publication Date: 2019-08-16
KIOXIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in the former method, there is a problem that the subsequent layer is dissolved or swelled by the chemical solution used in the processing step, causing the element substrate to peel off in the processing step
In addition, when an adhesive layer that is resistant to the chemical solution used in the processing step is used, there is a problem that the dissolution rate of the adhesive layer decreases even with the chemical solution used for dissolution, thereby reducing productivity
Moreover, in the latter method, there is a problem that the effective area of ​​the peripheral portion of the semiconductor substrate is reduced in consideration of processing accuracy, thereby reducing productivity.

Method used

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  • Manufacturing method of semiconductor device and semiconductor manufacturing device
  • Manufacturing method of semiconductor device and semiconductor manufacturing device
  • Manufacturing method of semiconductor device and semiconductor manufacturing device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0025] Figure 1 to Figure 6 This is a diagram showing the first embodiment. Hereinafter, as for the first substrate, the processing steps of the semiconductor substrate 1 subjected to the steps of back grinding and TSV (through silicon via) formation will be described.

[0026] figure 1 (a) shows a cross section of an outer peripheral portion of a semiconductor substrate 1 such as a silicon substrate as a first substrate. The element forming portion 2 on the surface of the semiconductor substrate 1 other than the peripheral portion is formed like figure 1 As shown in (b), it is formed in a state including a plurality of chips having semiconductor circuits including semiconductor elements. When the step of embedding the semiconductor circuit in the element formation portion 2 of the semiconductor substrate 1 is completed, next, the peripheral portion on the surface (upper surface) side of the semiconductor substrate 1 is subjected to grinding treatment (edge ​​trimming treat...

no. 2 approach

[0044] Figure 7 ~ Figure 12 Shows the second embodiment. Hereinafter, portions different from those of the first embodiment will be described.

[0045] In this embodiment, the semiconductor substrate 1 is attached to the support substrate 4 and the back surface processing of the semiconductor substrate 1 is performed similarly to the first embodiment. Thereafter, before attaching patch 6, something like Figure 7 Dividing processing is performed on the back surface of the element formation portion 2 of the semiconductor substrate 1 as shown. In the chip dividing process, the element forming portion 2 is cut and processed to a depth reaching the peeling layer 3 . As a result, chip dividing grooves 2 a are formed in a grid pattern at a predetermined depth on the rear surface of the element formation portion 2 of the semiconductor substrate 1 , and the semiconductor circuit is bonded to the release layer 3 while being separated by the chip.

[0046] Next, something like Fi...

no. 3 approach

[0060] Figure 13 The third embodiment is shown, and an example different from the ultraviolet irradiation device used in the first embodiment is shown. The ultraviolet irradiation device 20 is a device that irradiates ultraviolet rays similarly to the ultraviolet irradiation device 10, and the substrate to be irradiated is in a state in which the element formation part 2 side of the semiconductor substrate 1 is attached to the support substrate 4, and the The chip 6 is attached to the back side of the element forming part 2 and held by the ring frame 7 .

[0061] The stage 21 on which the ring-shaped frame 7 and the patch 6 are placed is a disk-shaped stage containing a light-shielding material except for the light-transmitting portion 21a, and is configured such that its circumference is held, for example. The light-transmitting part 21a of the stage 21 is provided in circular shape corresponding to the part 6a which irradiates the ultraviolet-ray to the annular frame 7 and...

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PUM

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Abstract

Embodiments of the present invention provide a semiconductor device manufacturing method and a semiconductor manufacturing apparatus capable of peeling a first substrate from a substrate in which a first substrate is bonded to a second substrate in an easy and inexpensive procedure. According to an embodiment, the manufacturing method includes the step of affixing the patch on the back side of a first substrate having a part of an adhesive layer on the outer peripheral portion of the surface through the adhesive layer. and a release layer are provided with a second substrate, and a semiconductor element is formed, and the patch is coated with an adhesive whose adhesive strength will be reduced due to ultraviolet radiation; The adhesive part of the outer peripheral part of the first substrate is irradiated with ultraviolet rays to reduce the adhesive strength; and at the adhesive part and the release layer part where the adhesive strength is reduced, the The first substrate in a sheet state is peeled off to be separated from the second substrate.

Description

[0001] [Related Application] [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2014-187677 (filing date: September 16, 2014). This application incorporates all the contents of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to a method of manufacturing a semiconductor device and a semiconductor manufacturing device. Background technique [0004] As a semiconductor device, for example, in a device having a TSV (through silicon via) structure, the semiconductor substrate is subjected to processing such as via hole formation, wiring formation, insulating layer formation, and bump formation after thin-thickness processing. . As a technique for realizing step transfer in such a semiconductor substrate, there is a technique of forming a state in which the semiconductor substrate is bonded to a support substrate using an adhesive materia...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H01L21/78H01L21/67
CPCH01L21/67115H01L2221/68318H01L2221/68381H01L21/2007H01L21/6835H01L21/6836H01L21/78B32B43/006H01L2221/68386H01L2221/68327H01L2221/6834B32B2310/0831B32B2310/0843B32B2457/14B23K26/00
Inventor 志摩真也高桥健司
Owner KIOXIA CORP