Method for measuring junction temperature of semiconductor device under condition of surge current

A technology of surge current and measurement method, applied in the field of electronic device testing, can solve problems such as the inapplicability of electrical methods, and achieve the effect of reducing the number, reducing the number of values, saving workload and measuring time

Inactive Publication Date: 2016-10-26
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because the traditional method requires switching, the required time is even longer than the pulse width of the surge current, so the traditional electrical method is not applicable

Method used

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  • Method for measuring junction temperature of semiconductor device under condition of surge current
  • Method for measuring junction temperature of semiconductor device under condition of surge current
  • Method for measuring junction temperature of semiconductor device under condition of surge current

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Embodiment Construction

[0048] The present invention will be described in more detail below with reference to the accompanying drawings and a specific implementation manner taking a certain diode semiconductor device as an example but not limited to this example.

[0049] The testing device involved in the present invention is as figure 1 shown.

[0050] Step 1, connect the semiconductor device (1) to the pulse generator (4), connect the semiconductor device (1) to the data acquisition instrument (5), put the semiconductor device (1) into the incubator (2), set The temperature is set at 30°C, and the semiconductor device (1) is heated by the thermostat (2).

[0051] Step 2, when the heating time of the semiconductor device (1) by the incubator (2) reaches the expected time, a short pulse with increasing voltage value is applied to the semiconductor device (1) through the pulse generator (4). Note that the pulse width can be in accordance with the provisions of the national military standard 128A-19...

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Abstract

The invention provides a method for measuring junction temperature of a semiconductor device under the condition of surge current, and belongs to the field of test of an electronic device. The surge current of the semiconductor device is peak current passing through the device the moment a working power supply is connected. Due to existence of device itself or circuit parasitic capacitance or capacitive load of a circuit, the value of the peak current is far larger than the input current of the device under a stable working state; transient large current causes transient temperature rise; and in severe cases, the semiconductor device can be damaged. Compared with a conventional electrical method, the method in the invention enables the working current and the test current to be integrated. The method is characterized by applying voltage pulse, of which the duration time is short and amplitude changes incrementally, to a device to be tested, and establishing a special temperature-adjusting curve database; processing the data in the database through a spline interpolation method; then, measuring voltage and current data at the two ends of the device to be tested under the condition of surge current; and finally, comparing the data with the temperature-adjusting curve data in the database to obtain the junction temperature of the device to be tested under the condition of surge current.

Description

technical field [0001] The invention belongs to the field of electronic device testing, and is mainly applied to measuring the junction temperature of semiconductor devices under surge current conditions, in particular to a method for testing the junction temperature of VDMOS devices under surge current conditions. Background technique [0002] The surge current of a semiconductor device refers to the peak current flowing through the device at the moment when the working power is turned on. Due to the parasitic capacitance of the device itself or the circuit or the existence of capacitive loads in the circuit, the value of the peak current is much greater than the input current in the steady state of the device. damage to the device. Accurately measuring the junction temperature of semiconductor devices when the surge current phenomenon occurs is of great significance for the design of semiconductor devices, the design of practical application circuits, and the theoretical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/26
Inventor 郭春生苏雅廖之恒冯士维朱慧
Owner BEIJING UNIV OF TECH
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