3d global pixel unit and preparation method thereof

A pixel unit, global technology, applied in electrical components, radiation control devices, semiconductor/solid-state device manufacturing, etc., can solve the problem of photosensitive units, storage capacitors and readout circuits easily interfering with each other, so as to improve optical isolation, reduce Small chip area, improved optical path effect

Active Publication Date: 2019-06-04
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, the photosensitive unit, the storage capacitor and the readout circuit tend to interfere with each other

Method used

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  • 3d global pixel unit and preparation method thereof
  • 3d global pixel unit and preparation method thereof
  • 3d global pixel unit and preparation method thereof

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Embodiment Construction

[0050] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0051] In the present invention, the photosensitive unit of the first silicon substrate layer and the signal storage and readout unit of the second silicon substrate layer are arranged in the vertical direction, and the photosensitive unit is located above the signal storage and readout unit; through the first dielectric layer The connection with the second dielectric layer and the connection between the first direct connection structure and the second direct connection structure realize the interconnection between the photosensitive unit and the signal storage and ...

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Abstract

The invention provides a 3D global pixel unit and a preparation method thereof, comprising a photosensitive region arranged in a vertical direction and a 10T signal storage and readout region; through the connection between the first dielectric layer and the second dielectric layer, the first direct The connection between the connection structure and the second direct connection structure realizes the interconnection between the photosensitive diode and the signal storage and readout circuit; through the first, second, third and fourth switch tubes, the reset switch and the transmission tube are connected according to a certain sequence They are respectively stored in the first and second sampling capacitors, and finally the signal voltage acquired during the exposure time is stored in the pixel unit for a period of time and then read out, thereby realizing the global shutter exposure of the entire pixel unit array; the present invention can realize 10T signal The vertical interconnection between the storage and readout circuit and the photodiode not only improves the optical path between the outside world and the photodiode, improves the optical isolation of the signal storage capacitor, but also reduces the chip area occupied by the pixel unit.

Description

technical field [0001] The invention relates to the technical field of semiconductor image sensing, in particular to a 3D global pixel unit and a preparation method thereof. Background technique [0002] Traditional global shutter pixel technology is mainly used in CCD image sensors. Due to the increasing popularity of CMOS image sensors, and because machine vision, film production, industrial, automotive, and scanning applications must capture fast-moving objects with high Traditional barriers associated with shutter pixel technology. With this effort, the provided global shutter pixel technology has smaller pixel size, larger fill factor, lower dark current, and lower noise, making CMOS image sensors the preferred choice for CCD sensors in more applications. Viable alternatives. [0003] In the global pixel unit of a conventional CMOS image sensor, the photosensitive diode and the signal storage and readout circuit unit devices are all made in the same plane. The stora...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L27/146
CPCH01L21/768H01L27/146H01L27/14605H01L27/14636
Inventor 赵宇航
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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