30results about How to "Improve light path" patented technology

The invention provides a 3D global pixel unit and a preparation method therefor. The 3D global pixel unit comprises a light-sensitive region manufactured on a first silicon substrate layer, and a 8T signal storage and reading circuit region manufactured on a second silicon substrate layer; the light-sensitive region and the 8T signal storage and reading circuit region are arranged in a vertical direction; the interconnection of the light-sensitive region and the 8T signal storage and reading circuit region is realized through connection of through holes; a reset switch and a transmission pipe are stored on a first storage node and a second storage node through a first switch tube and a second switch tube based on a certain time sequence; and finally, the signal voltage obtained in the exposure time is stored in the pixel unit for a certain time and then is read out, so that the global shutter exposure of the overall pixel unit array is realized consequently. According to the 3D global pixel unit, the perpendicular interconnection of the reading circuit and the light-sensitive diode is realized; and therefore, the light access between the external and the light-sensitive diode is improved, the optical isolation degree of a signal storage capacitor is improved, and the occupied chip area of the pixel unit is reduced as well.

A passively mode-locked picosecond laser device comprising a pump source, a laser crystal, a laser cavity, a mode-locked output structure is provided. In the device, the pump source is placed at the side of the incident end surface of the laser crystal; the laser cavity includes a plane reflective mirror and a first plano-concave mirror, the reflective mirror is placed opposite to the concave surface of the plano-concave mirror and located on the position of the focal radius of the plano-concave mirror. The normal direction of the reflective mirror and the axis of the plano-concave mirror form a small angle therebetween; the laser generated from the laser crystal oscillates in the laser cavity, and output through the mode-locked output structure. The device uses a stable cavity design of the equivalent confocal cavity, which can increase the optical path, reduce the repetition frequency, and significantly reduce the cavity length and volume.

The invention discloses a 3D global pixel structure and a preparation method thereof, comprising a photoelectric signal generating circuit unit prepared on a first silicon substrate layer, a signal storage capacitor unit prepared on a second silicon substrate layer, and a photoelectric signal generating circuit The unit and the signal storage capacitor unit are arranged in the vertical direction, and the interconnection between the photoelectric signal generation circuit unit and the signal storage capacitor unit is realized through the connection relationship formed between the direct connection structure, the through hole, the metal layer wiring and the contact hole. connection; the present invention prepares three-dimensional unit structures at different levels by adopting back-illumination technology and 3D stacking structure, which can realize the vertical interconnection between the photoelectric signal generation circuit unit and the signal storage capacitor unit, thereby not only improving the distance between the outside world and the photodiode The optical path improves the optical isolation of the signal storage capacitor and reduces the chip area occupied by the pixel unit.

The invention provides a 3D global pixel unit and a preparation method thereof, comprising a photosensitive region arranged in a vertical direction and a 10T signal storage and readout region; through the connection between the first dielectric layer and the second dielectric layer, the first direct The connection between the connection structure and the second direct connection structure realizes the interconnection between the photosensitive diode and the signal storage and readout circuit; through the first, second, third and fourth switch tubes, the reset switch and the transmission tube are connected according to a certain sequence They are respectively stored in the first and second sampling capacitors, and finally the signal voltage acquired during the exposure time is stored in the pixel unit for a period of time and then read out, thereby realizing the global shutter exposure of the entire pixel unit array; the present invention can realize 10T signal The vertical interconnection between the storage and readout circuit and the photodiode not only improves the optical path between the outside world and the photodiode, improves the optical isolation of the signal storage capacitor, but also reduces the chip area occupied by the pixel unit.

The invention provides a 3D global pixel unit and a preparation method thereof, including a photosensitive diode fabricated on a first silicon substrate layer and a signal storage and readout circuit fabricated on a second silicon substrate layer; The output circuit is arranged in the vertical direction; the interconnection between the photodiode and the signal storage and readout circuit is realized by the connection of the through holes; the present invention can realize the three-dimensional unit structure at different levels by using the back-illumination process and the 3D structure. The vertical interconnection between the signal storage and readout circuit and the photosensitive diode not only improves the optical path between the outside world and the photosensitive diode, improves the optical isolation of the signal storage capacitor, but also reduces the chip area occupied by the pixel unit.