30results about How to "Improve light path" patented technology

The invention provides a 3D global pixel unit and a preparation method therefor. The 3D global pixel unit comprises a light-sensitive region manufactured on a first silicon substrate layer, and a 8T signal storage and reading circuit region manufactured on a second silicon substrate layer; the light-sensitive region and the 8T signal storage and reading circuit region are arranged in a vertical direction; the interconnection of the light-sensitive region and the 8T signal storage and reading circuit region is realized through connection of through holes; a reset switch and a transmission pipe are stored on a first storage node and a second storage node through a first switch tube and a second switch tube based on a certain time sequence; and finally, the signal voltage obtained in the exposure time is stored in the pixel unit for a certain time and then is read out, so that the global shutter exposure of the overall pixel unit array is realized consequently. According to the 3D global pixel unit, the perpendicular interconnection of the reading circuit and the light-sensitive diode is realized; and therefore, the light access between the external and the light-sensitive diode is improved, the optical isolation degree of a signal storage capacitor is improved, and the occupied chip area of the pixel unit is reduced as well.

A passively mode-locked picosecond laser device comprising a pump source, a laser crystal, a laser cavity, a mode-locked output structure is provided. In the device, the pump source is placed at the side of the incident end surface of the laser crystal; the laser cavity includes a plane reflective mirror and a first plano-concave mirror, the reflective mirror is placed opposite to the concave surface of the plano-concave mirror and located on the position of the focal radius of the plano-concave mirror. The normal direction of the reflective mirror and the axis of the plano-concave mirror form a small angle therebetween; the laser generated from the laser crystal oscillates in the laser cavity, and output through the mode-locked output structure. The device uses a stable cavity design of the equivalent confocal cavity, which can increase the optical path, reduce the repetition frequency, and significantly reduce the cavity length and volume.

The invention provides an infrared gas sensor. The infrared gas sensor comprises an optical cavity, a signal collection circuit board and an infrared light source and a detector, wherein the infrared light source and the detector are respectively connected with the signal collection circuit board; a light source mounting hole and a detector mounting hole are formed in the cavity wall of the optical cavity; the infrared light source is mounted in the light source mounting hole; the detector is mounted in the detector mounting hole; the inner wall of the optical cavity, the cylindrical reflection surface of a reflection column, the light source reflection surface of an optical reflection lock and the receiving reflection surface form a C-shaped light path of the infrared gas sensor. The infrared gas sensor has the advantages of being simple in structure, convenient to assemble, small in size and long in light path.

An optical module for increasing magnification of a microscope includes an objective and an eyepiece between which is an optical path for light to travel. The optical includes light diverging elements for dividing the optical path into two parallel light paths after leaving the objective; and several orthonormally-arranged reflective elements including at least a first and a last reflective element, each reflective element having a reflective surface diagonal relative to the orthonormal arrangement of the elements, and also arranged to successively reflect the parallel light paths, from element to element, from the objective when the module is inserted in the optical microscope, beneath the eyepiece. Also included are light converging elements for converging the parallel paths into a single path before producing an image at the eyepiece.

The invention belongs to the technical field of optical fiber manufacturing, and specifically discloses a preparation method of a tapered-core optical fiber with a gradually changing core-to-clad ratio and the tapered-core optical fiber. The method includes: depositing a loose layer of glass particles on the inner wall of the reaction tube; doping the loose layer of glass particles with rare earth ions; drying and sintering the reaction tube at high temperature, so that the loose layer of glass particles is vitrified and melted into a solid prefabricated Rod mandrel, and then polished to obtain a conical mandrel with a specified cone angle; processing to obtain a cylindrical glass rod with a conical hole, combining a glass rod with a conical hole and a conical mandrel to obtain The tapered core active optical fiber preform is put into a drawing tower to make a tapered core fiber with a gradually changing core-to-clad ratio. The tapered core fiber is prepared by the above method. The core-clad ratio of the tapered core optical fiber prepared by the invention gradually changes with the length of the fiber, which can improve the pump light absorption of the fiber, balance the heat production of the fiber, and increase the output power of the laser.

An optical mechanism installed in an office machine, which has a machine base defining an internal space, and a paper-feeding mechanism arranged on the machine base, the paper-feeding mechanism having an inside receiving space and a bottom incident zone for the passing of light. The optical mechanism has an optical-path device formed of an image sensor and an optical module and mounted in the internal space inside the machine base, and a light-focusing structure mounted in the receiving space inside the paper-feeding mechanism above the incident zone for increasing optical path.

The invention discloses a 3D global pixel structure and a preparation method thereof, comprising a photoelectric signal generating circuit unit prepared on a first silicon substrate layer, a signal storage capacitor unit prepared on a second silicon substrate layer, and a photoelectric signal generating circuit The unit and the signal storage capacitor unit are arranged in the vertical direction, and the interconnection between the photoelectric signal generation circuit unit and the signal storage capacitor unit is realized through the connection relationship formed between the direct connection structure, the through hole, the metal layer wiring and the contact hole. connection; the present invention prepares three-dimensional unit structures at different levels by adopting back-illumination technology and 3D stacking structure, which can realize the vertical interconnection between the photoelectric signal generation circuit unit and the signal storage capacitor unit, thereby not only improving the distance between the outside world and the photodiode The optical path improves the optical isolation of the signal storage capacitor and reduces the chip area occupied by the pixel unit.

The invention provides a 3D global pixel unit and a preparation method thereof, comprising a photosensitive region arranged in a vertical direction and a 10T signal storage and readout region; through the connection between the first dielectric layer and the second dielectric layer, the first direct The connection between the connection structure and the second direct connection structure realizes the interconnection between the photosensitive diode and the signal storage and readout circuit; through the first, second, third and fourth switch tubes, the reset switch and the transmission tube are connected according to a certain sequence They are respectively stored in the first and second sampling capacitors, and finally the signal voltage acquired during the exposure time is stored in the pixel unit for a period of time and then read out, thereby realizing the global shutter exposure of the entire pixel unit array; the present invention can realize 10T signal The vertical interconnection between the storage and readout circuit and the photodiode not only improves the optical path between the outside world and the photodiode, improves the optical isolation of the signal storage capacitor, but also reduces the chip area occupied by the pixel unit.

The invention provides a 3D global pixel unit and a preparation method thereof. The 3D global pixel unit comprises a photosensitive unit manufactured on a first silicon substrate layer and a signal storage and read-out circuit manufactured on a second silicon substrate layer, wherein the photosensitive unit and the signal storage and read-out circuit are arranged in the vertical direction; and interconnection of the photosensitive unit and the signal storage and read-out circuit is achieved through connection of a first dielectric layer and a second dielectric layer and connection of a first direct connection structure and a second direct connection structure. By adopting a back-illuminated technology and a 3D structure, vertical interconnection of the signal storage and read-out circuit and a photosensitive diode can be achieved by manufacturing three-dimensional unit structures on different levels, so that an optical channel of the outside and the photosensitive diode is improved, the optical isolation of a signal storage capacitor is improved, and furthermore, the chip area occupied by the pixel unit is reduced.

The invention discloses a 3D global pixel structure and a preparation method thereof, comprising a photoelectric signal generating circuit unit fabricated on a first silicon substrate layer, a signal storage capacitor unit fabricated on a second silicon substrate layer, and a photoelectric signal generating circuit The unit and the signal storage capacitor unit are arranged in the vertical direction, and the interconnection between the photoelectric signal generation circuit unit and the signal storage capacitor unit is realized through the connection between the through hole, the metal wiring and the contact hole; the present invention adopts the back According to the technology and 3D stacking structure, the three-dimensional unit structure is made at different levels, which can realize the vertical interconnection of the photoelectric signal generation circuit unit and the signal storage capacitor unit, which not only improves the optical path between the outside world and the photodiode, but also improves the signal storage. The optical isolation of the capacitor is improved, and the chip area occupied by the pixel unit is reduced.

The present invention discloses a three-dimensional coordinate measurement method based on line structure light scanning. The method comprises the steps of (S1) a line laser emits laser, and a laser line is formed on a measured object, (S2) the image information corresponding to the laser line formed on the measured object, (S3) a control processing system calculates a corresponding three-dimensional coordinate according to the image information of the (S2) and controls the object to move for a particular distance, (S4) the steps (S2) and (S3) are repeated, and the complete three-dimensional coordinate of the measured object is obtained. By using the method of the invention, the laser line formed on the measured object by the line laser is reflected for many times through an optical system, the image information of the laser line can be obtained from different positions with one camera, the block problem in a single-camera visual sensor is solved, the effect of a double-camera visual sensor is achieved, the cost is low, and a control processing system is simple.

The invention provides a 3D global pixel unit and a preparation method thereof, including a photosensitive diode fabricated on a first silicon substrate layer and a signal storage and readout circuit fabricated on a second silicon substrate layer; The output circuit is arranged in the vertical direction; the interconnection between the photodiode and the signal storage and readout circuit is realized by the connection of the through holes; the present invention can realize the three-dimensional unit structure at different levels by using the back-illumination process and the 3D structure. The vertical interconnection between the signal storage and readout circuit and the photosensitive diode not only improves the optical path between the outside world and the photosensitive diode, improves the optical isolation of the signal storage capacitor, but also reduces the chip area occupied by the pixel unit.