3d global pixel unit and preparation method thereof

A pixel unit, global technology, applied in the direction of electrical components, radiation control devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of photosensitive units, storage capacitors and readout circuits that are easy to interfere with each other, so as to improve optical isolation and improve Effect of light path and chip area reduction

Active Publication Date: 2019-06-21
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, the photosensitive unit, the storage capacitor and the readout circuit tend to interfere with each other

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • 3d global pixel unit and preparation method thereof
  • 3d global pixel unit and preparation method thereof
  • 3d global pixel unit and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0050] The 3D global pixel unit of the present invention is at least composed of a photosensitive area fabricated on the first silicon substrate layer and a signal storage and readout circuit area fabricated on the second silicon substrate layer; the photosensitive area is located in the signal storage and readout circuit area Above; the photosensitive area has a photosensitive unit located in the first silicon substrate layer, and the signal storage and readout circuit area has a signal storage and readout circuit located in the second silicon substrate layer, thro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a 3D global pixel unit and a preparation method thereof. The 3D global pixel unit comprises a photosensitive unit manufactured on a first silicon substrate layer and a signal storage and read-out circuit manufactured on a second silicon substrate layer, wherein the photosensitive unit and the signal storage and read-out circuit are arranged in the vertical direction; and interconnection of the photosensitive unit and the signal storage and read-out circuit is achieved through connection of a first dielectric layer and a second dielectric layer and connection of a first direct connection structure and a second direct connection structure. By adopting a back-illuminated technology and a 3D structure, vertical interconnection of the signal storage and read-out circuit and a photosensitive diode can be achieved by manufacturing three-dimensional unit structures on different levels, so that an optical channel of the outside and the photosensitive diode is improved, the optical isolation of a signal storage capacitor is improved, and furthermore, the chip area occupied by the pixel unit is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor image sensing, in particular to a 3D global pixel unit and a preparation method thereof. Background technique [0002] Traditional global shutter pixel technology is mainly used in CCD image sensors. Due to the increasing popularity of CMOS image sensors, and because machine vision, film production, industrial, automotive, and scanning applications must capture fast-moving objects with high Traditional barriers associated with shutter pixel technology. With this effort, the provided global shutter pixel technology has smaller pixel size, larger fill factor, lower dark current, and lower noise, making CMOS image sensors the preferred choice for CCD sensors in more applications. Viable alternatives. [0003] In the global shutter pixel unit of a conventional CMOS image sensor, the photosensitive diode and the signal storage and readout circuit unit devices are all made in the same plane. T...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L21/768
CPCH01L21/768H01L27/146H01L27/14605H01L27/14636
Inventor 赵宇航
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap