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3d global pixel unit and preparation method thereof

A pixel unit, global technology, applied in electrical components, radiation control devices, semiconductor/solid-state device manufacturing, etc., can solve the problem of photodiodes, storage capacitors and readout circuits easily interfering with each other, to improve optical isolation, improve Light path, the effect of reducing the chip area

Active Publication Date: 2019-02-05
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, photodiodes, storage capacitors and readout circuits are prone to interfere with each other

Method used

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  • 3d global pixel unit and preparation method thereof
  • 3d global pixel unit and preparation method thereof
  • 3d global pixel unit and preparation method thereof

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Embodiment Construction

[0039]In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0040] The 3D global pixel unit of the present invention is at least composed of a photosensitive area fabricated on the first silicon substrate layer and a signal storage and readout circuit area fabricated on the second silicon substrate layer; the photosensitive area is located in the signal storage and readout circuit area Above; the photosensitive area has a photosensitive diode located on the first silicon substrate layer, the signal storage and readout circuit unit area has a signal storage and readout circuit located on the second silicon substrate layer, and...

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Abstract

The invention provides a 3D global pixel unit and a preparation method thereof, including a photosensitive diode fabricated on a first silicon substrate layer and a signal storage and readout circuit fabricated on a second silicon substrate layer; The output circuit is arranged in the vertical direction; the interconnection between the photodiode and the signal storage and readout circuit is realized by the connection of the through holes; the present invention can realize the three-dimensional unit structure at different levels by using the back-illumination process and the 3D structure. The vertical interconnection between the signal storage and readout circuit and the photosensitive diode not only improves the optical path between the outside world and the photosensitive diode, improves the optical isolation of the signal storage capacitor, but also reduces the chip area occupied by the pixel unit.

Description

technical field [0001] The invention relates to the technical field of semiconductor image sensing, in particular to a 3D 10T global pixel unit and a preparation method thereof. Background technique [0002] Traditional global shutter pixel technology is mainly used in CCD image sensors. Due to the increasing popularity of CMOS image sensors, and because machine vision, film production, industrial, automotive, and scanning applications must capture fast-moving objects with high Traditional barriers associated with shutter pixel technology. With this effort, the provided global shutter pixel technology has smaller pixel size, larger fill factor, lower dark current, and lower noise, making CMOS image sensors the preferred choice for CCD sensors in more applications. Viable alternatives. [0003] In the global pixel unit of a conventional CMOS image sensor, the photosensitive diode and the signal storage and readout circuit unit devices are all made in the same plane. The s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L27/146
CPCH01L21/768H01L27/146H01L27/14605H01L27/14636
Inventor 赵宇航
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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