3D global pixel unit and manufacturing method thereof

A pixel unit, global technology, applied in the direction of electrical components, radiation control devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of photodiodes, storage capacitors and readout circuits that are easy to interfere with each other, and achieve improved optical isolation and improved Effect of light path and chip area reduction

Active Publication Date: 2016-09-28
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Moreover, photodiodes, storage capacitors and read

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  • 3D global pixel unit and manufacturing method thereof
  • 3D global pixel unit and manufacturing method thereof
  • 3D global pixel unit and manufacturing method thereof

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Embodiment Construction

[0039]In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0040] The 3D global pixel unit of the present invention is at least composed of a photosensitive area fabricated on the first silicon substrate layer and a signal storage and readout circuit area fabricated on the second silicon substrate layer; the photosensitive area is located in the signal storage and readout circuit area Above; the photosensitive area has a photosensitive diode located on the first silicon substrate layer, the signal storage and readout circuit unit area has a signal storage and readout circuit located on the second silicon substrate layer, and...

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Abstract

The invention provides a 3D global pixel unit and a manufacturing method thereof. The 3D global pixel unit comprises a photosensitive diode manufactured on a first silicon substrate layer and a signal storage and reading-out circuit manufactured on a second silicon substrate layer, wherein the photosensitive diode and the signal storage and reading-out circuit are vertically arranged and are mutually connected through a through hole. According to the 3D global pixel unit, the back light technology and the 3D structure are employed, stereo unit structures are manufactured at different layers, the photosensitive diode and the signal storage and reading-out circuit are vertically arranged, so not only can light paths between the external part and the photosensitive diode are improved, light isolation of a signal storage capacitor is improved, and a chip area occupied by pixel units can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor image sensing, in particular to a 3D 10T global pixel unit and a preparation method thereof. Background technique [0002] Traditional global shutter pixel technology is mainly used in CCD image sensors. Due to the increasing popularity of CMOS image sensors, and because machine vision, film production, industrial, automotive, and scanning applications must capture fast-moving objects with high Traditional barriers associated with shutter pixel technology. With this effort, the provided global shutter pixel technology has smaller pixel size, larger fill factor, lower dark current, and lower noise, making CMOS image sensors the preferred choice for CCD sensors in more applications. Viable alternatives. [0003] In the global pixel unit of a conventional CMOS image sensor, the photosensitive diode and the signal storage and readout circuit unit devices are all made in the same plane. The s...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L27/146
CPCH01L21/768H01L27/146H01L27/14605H01L27/14636
Inventor 赵宇航
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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