Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thermal resistance obtaining method

An acquisition method and technology of thermal resistance, applied in instruments, measuring devices, measuring electricity, etc., can solve the problems of high cost, low reliability and accuracy, and achieve the effect of improving reliability and accuracy

Active Publication Date: 2016-11-09
SOI MICRO CO LTD
View PDF10 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a thermal resistance acquisition method, which solves the technical problems of high cost, low reliability and precision in the thermal resistance acquisition method in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thermal resistance obtaining method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The invention provides a thermal resistance acquisition method, which solves the technical problems of high cost, low reliability and low precision in the thermal resistance acquisition method in the prior art, and achieves the technical effect of improving reliability and precision and reducing cost.

[0031] In order to better understand the above technical solutions, the above technical solutions will be described in detail below in conjunction with the accompanying drawings and specific implementation methods. It should be understood that the embodiments of the present invention and the specific features in the embodiments are detailed descriptions of the technical solutions of the present application. , rather than limiting the technical solutions of the present application, the embodiments of the present application and the technical features in the embodiments can be combined without conflict.

[0032] see figure 1 , a thermal resistance acquisition method provid...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of semiconductor reliability and discloses a thermal resistance obtaining method. The method comprises the following steps: manufacturing an active region diffused resistor on the silicon membrane of a MOS device; obtaining the resistor temperature features of the resistor; obtaining the resistance of the resistor when the MOS device works; based on the resistor temperature features, obtaining the temperature of the resistor; obtaining the temperature difference [delta] T prior to and after when the MOS device works and the thermal dissipation power [delta] P of the MOS device; based on the formula Rth=[delta] T / [delta] P, calculating the thermal resistance Rth. The invention provides a reliable and accurate high thermal resistance obtaining method.

Description

technical field [0001] The invention relates to the technical field of semiconductor reliability, in particular to a method for obtaining thermal resistance. Background technique [0002] Due to the poor thermal conductivity of the BOX layer, which is about one hundredth that of silicon, it hinders the cooling of the SOI device, causing the device temperature to rise, which in turn produces a severe self-heating effect. The self-heating effect degrades the carrier mobility, increases the junction leakage, increases the probability of impact ionization, and negative differential conductance occurs in the saturation region. It should be noted that the self-heating effect can be significant when the power is high at DC. But when the device is operated at high frequencies, the self-heating effect disappears. Since most circuits operate at the boundary frequency of the self-heating effect, for accurate circuit simulation, it is necessary to extract parameters related to the sel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 卜建辉李彬鸿罗家俊韩郑生
Owner SOI MICRO CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com