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Oxidized grapheme quantum dot humidity sensor and preparation method thereof

A technology of graphene quantum dots and humidity sensors, which is applied in the direction of instruments, measuring devices, scientific instruments, etc., can solve the problems of thick humidity sensitive film, easy to be eroded by external water vapor, poor adhesion between film and substrate, etc., and achieve strong resistance Electromagnetic interference capability, beneficial to electronic conduction, and fast response speed

Active Publication Date: 2016-11-16
SOUTHWEST JIAOTONG UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] In 2015, in the document Subsecond Response of Humidity Sensor Based on GrapheneOxide Quantum Dots, a resistive humidity sensor based on graphene oxide quantum dots was proposed. Coated on the electrode area, this humidity sensor uses graphene oxide quantum dots as the humidity sensitive material. Graphene oxide quantum dots have a very large specific surface area and abundant hydrophilic groups. The sensor can achieve a sub-second response speed. However, the film-forming method of spin coating results in a thicker humidity-sensitive film and poor adhesion between the film and the substrate. Therefore, it is difficult to further improve the response speed of this sensor, and it is easily corroded by external water vapor, which affects the performance of the sensor.

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  • Oxidized grapheme quantum dot humidity sensor and preparation method thereof

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Embodiment Construction

[0022] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0023] A preparation method for graphene oxide quantum dot humidity sensor, comprising the following steps:

[0024] (1), clean the silicon substrate, form a layer of silicon dioxide on the surface of the silicon substrate by thermal oxidation, and then form the first electrode and the first electrode with a distance of less than or equal to 20 microns on the surface of the silicon dioxide layer by vacuum coating method The second ele...

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Abstract

The invention provides an oxidized grapheme quantum dot humidity sensor and a preparation method thereof. The sensor comprises a silicone substrate, a silicon dioxide layer, a first electrode, a second electrode, a poly diallyldimethylammonium chloride thin film and an oxidized grapheme quantum dot thin film. The preparation method includes the following steps that 1, the silicon dioxide layer is formed on the surface of the silicone substrate, the first electrode and the second electrode are formed on the surface of the silicon dioxide layer, and an electrode substrate is obtained; 2, the poly diallyldimethylammonium chloride thin film is electrostatically adsorbed on the portion between the first electrode and the second surface and on the surface of the first electrode and the surface of the second electrode; 3, the oxidized grapheme quantum dot thin film is electrostatically adsorbed on the surface of the poly diallyldimethylammonium chloride thin film. The humidity sensor has extremely high response speed, and is resistant to high humidity corrosion and high in anti-electromagnetic-interference capacity.

Description

technical field [0001] The invention relates to the field of sensor manufacturing, in particular to a graphene oxide quantum dot humidity sensor with the characteristics of ultra-fast response, high humidity erosion resistance, and electromagnetic interference resistance and a preparation method thereof. Background technique [0002] Fields such as UAV meteorological detection, sounding balloons, and gas drilling formation water monitoring often have higher application requirements for humidity sensors. Humidity sensors in these fields must not only have ultra-fast response speed High humidity erosion performance and good anti-electromagnetic interference characteristics are also required, so it is of great significance to develop high-performance humidity sensors. [0003] In 2015, in the document Subsecond Response of Humidity Sensor Based on GrapheneOxide Quantum Dots, a resistive humidity sensor based on graphene oxide quantum dots was proposed. Coated on the electrode ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/121G01N27/125
Inventor 陈向东李宁
Owner SOUTHWEST JIAOTONG UNIV
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