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Method for determining rare earth element doped in AgSnO2 contact material and ratio of rare earth element

A rare earth element and contact material technology, applied in contacts, electrical components, circuits, etc., can solve the problems of high cost and long time consumption, and achieve the effect of enhanced conductivity

Active Publication Date: 2016-12-07
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The method of the invention overcomes the problems of long time consumption, high cost and uncertain factors in the prior art of determining the optimal doping rare earth element and its optimal doping ratio in the contact material by means of a trial experiment. defect

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  • Method for determining rare earth element doped in AgSnO2 contact material and ratio of rare earth element
  • Method for determining rare earth element doped in AgSnO2 contact material and ratio of rare earth element
  • Method for determining rare earth element doped in AgSnO2 contact material and ratio of rare earth element

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Embodiment

[0040] This example determines that AgSnO 2 The method for doping the rare earth element in the contact material and its ratio is as follows:

[0041] The first step, choose AgSnO 2 Different doping rare earth elements in the contact material:

[0042] Choose AgSnO 2 The doped rare earth elements in the contact material are La, Ce, Nd and Gd respectively, and the SnO doped with rare earth elements La, Ce, Nd and Gd are respectively established by computer. 2 The supercell model is as follows:

[0043] (1) to AgSnO 2 SnO in contact material 2 Establish a 1×2×2 supercell, select Sn atoms located at the body center of any unit cell, and replace them with La atoms to obtain La-doped SnO 2 supercell model;

[0044] (2) to AgSnO 2 SnO in contact material 2 Establish a 1×2×2 supercell, select Sn atoms located at the body center of any unit cell, and replace them with Ce atoms to obtain Ce-doped SnO 2 supercell model;

[0045] (3) to AgSnO 2 SnO in contact material 2 Esta...

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Abstract

The invention discloses a method for determining a rare earth element doped in an AgSnO2 contact material and the ratio of the rare earth element and relates to a contact with precious metal containing oxide serving as a substrate material. A computer is used for conducting the calculation according to first principles for determining that the doped rare earth element making the SnO2 electrical conductivity best is La in the AgSnO2 contact material and judging that the best doping ratio of the rare earth element La in the AgSnO2 contact material is 16.67% according to the intensity of electrical conductivity; and the above optimal doped rare earth element and the above optimal doping ratio are verified through experiments. According to the method, the defects that in the prior art, a tentative experience method is used for determining the optimal doped rare earth element in a contact material and the optimal doping ratio of the optimal doped rare earth element, consequently, consumed time is long, cost is high, and uncertain factors exist are overcome.

Description

technical field [0001] The technical solution of the present invention relates to contacts containing noble metal oxides as base materials, specifically AgSnO 2 The rare earth element doped in the contact material and its proportioning method. Background technique [0002] Contact material is an important component of low-voltage electrical appliances, which is responsible for the connection and breaking of electrical appliances. Its electrical performance determines whether the electrical product can operate reliably and whether it can effectively connect and break circuits. Since the AgCdO contact material contains toxic substances and pollutes the environment, it has been replaced by AgSnO 2 The contact material is gradually replaced, and the new AgSnO 2 The contact material is an Ag with SnO 2 It exhibits excellent arc erosion resistance, wear resistance and welding resistance, and it does not contain toxic substances, which is safe and environmentally friendly. In A...

Claims

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Application Information

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IPC IPC(8): C22C5/06C22C32/00H01H1/0237
CPCC22C5/06C22C32/0021H01H1/0237
Inventor 王景芹赵彩甜蔡亚楠李若寒关家祥
Owner HEBEI UNIV OF TECH
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