Improved etching process

Abstract

According to the present invention, a method comprises the steps of: providing a semiconductor substrate; forming a doped oxide layer on the semiconductor substrate; forming a patterning layer on the doped oxide layer, while leaving exposure areas of the doped oxide layer; performing a sputtering process of the semiconductor substrate; and eliminating the doped oxide layer from the exposure areas by performing a wet etching process on the semiconductor substrate after performing the sputtering process. According to the present invention, the doped oxide layer may be eliminated without causing excessive side etching of doped oxide.

Description

technical field [0001] The present invention generally relates to the field of semiconductor technologies, and more particularly relates to semiconductor manufacturing processes. Background technique [0002] Semiconductor manufacturing methods typically use several types of etching processes. One type of etching process is a dry etching process. The dry etch process uses ion bombardment from a reactive gas to remove material from exposed surfaces. Another type of etching process is a wet etching process. The wet etch process uses a chemical solution to remove exposed material. [0003] Another process commonly used in semiconductor manufacturing methods is the doping process. The doping process involves implanting dopants into a semiconductor material to alter the electrical properties of the semiconductor material. One method of performing the doping process is to deposit a thin layer of doped oxide on the substrate. The doped oxide includes the desired type of dopan...

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Problems solved by technology

Using a dry etch process can damage the underlying substrate

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