Improved Etching Process

Abstract

The present invention provides an improved etching process. The method includes: providing a semiconductor substrate; forming a doped oxide layer on the semiconductor substrate; forming a patterned layer on the doped oxide layer, the patterned layer maintaining exposed regions of the doped oxide layer; performing sputtering on the substrate a sputtering process; and after the sputtering process, performing a wet etching process on the semiconductor substrate to remove the doped oxide layer from the exposed area.

Description

technical field [0001] The present invention generally relates to the field of semiconductor technologies, and more particularly relates to semiconductor manufacturing processes. Background technique [0002] Semiconductor manufacturing methods typically use several types of etching processes. One type of etching process is a dry etching process. The dry etch process uses ion bombardment from a reactive gas to remove material from exposed surfaces. Another type of etching process is a wet etching process. The wet etch process uses a chemical solution to remove exposed material. [0003] Another process commonly used in semiconductor manufacturing methods is the doping process. The doping process involves implanting dopants into a semiconductor material to alter the electrical properties of the semiconductor material. One method of performing the doping process is to deposit a thin layer of doped oxide on the substrate. The doped oxide includes the desired type of dopan...

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Problems solved by technology

Using a dry etch process can damage the underlying substrate

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