Unlock instant, AI-driven research and patent intelligence for your innovation.

Polymer for resist and resist composition containing same

A technology for resists and polymers, applied in the field of resist compositions and polymers for resists, can solve the problems of reduced etching resistance, pattern cracks, and deterioration of problems, and achieves prevention of reduced etching resistance, The effect of preventing thickness loss, excellent contrast

Active Publication Date: 2017-09-05
SK MATERIALS PERFORMANCE CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For polarity switching, in the case of conventional 193nm photoresists that only require bulky acid-labile groups as above, the thickness loss is exacerbated by the high content of the above groups
In order to solve the above problems, if a thicker resist layer is used, other problems such as pattern cracking and focus loss may occur, so it is not a practical solution
In addition, the pattern cracking that occurs in the case of NTD using a typical 193nm photoresist is due to the specific acid-labile groups that participate in polarity switching alone from the (meth)acrylate base polymer. For example, the problem is exacerbated by the relatively large number of (meth)acrylic acid units generated in the exposed regions of the photoresist after cleavage of tertiary alkyl esters and acetal leaving groups
In addition, in the case where such a conventional photoresist, which relies solely on the above-mentioned relatively polar acid-labile group for polarity switching, is used for NTD, there is another problem in that etching resistance decreases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polymer for resist and resist composition containing same
  • Polymer for resist and resist composition containing same
  • Polymer for resist and resist composition containing same

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0133] step 1

[0134]

[0135] In a 1L jacket type reactor, 360 g of 1,4-dioxane (1,4-dioxane) was used as a polymerization solvent, and 3-hydroxyadamantan-1-yl methacrylate (3-hydroxyadamantant - 1-yl methacrylate) (i) 120g and 6.5g of azobisisobutyronitrile (azobisbutyronitril, AIBN) as an initiator, then the temperature of the reactor was raised to 75°C and stirred for three hours. After cooling the obtained polymerization solution to normal temperature, n-hexane (n-hexane) was slowly added dropwise to carry out precipitation reaction. The obtained precipitate was filtered under reduced pressure with a vacuum filter, and dried under reduced pressure for one day to prepare 95 g of HAMA homopolymer (ii).

[0136] The polystyrene-equivalent weight average molecular weight (Mw) of the obtained polymer was 4955 g / mol, and the ratio (Mw / Mn) of the weight average molecular weight to the number average molecular weight was 1.64.

[0137] step 2

[0138]

[0139] In the ab...

Synthetic example 6

[0146] 20 g of the HAMA homopolymer (ii) prepared in the above step 1 of the above polymer synthesis example 1 was dissolved in 200 ml of tetrahydrofuran (THF), and then 3.05 g of tert-butyl vinyl ether and a catalyst amount of trifluoro Acetic acid (trifluoroacetic acid), stirred at room temperature for two days. After confirming the termination of the reaction by 1H NMR, the obtained polymerization solution was dropped into n-hexane (n-hexane) as a precipitation solvent to perform a precipitation reaction. The obtained precipitate was filtered under reduced pressure with a vacuum filter, and 15 g of polymer (1c) was prepared after one day of reduced-pressure drying.

[0147]

Synthetic example 7

[0149] 20 g of the HAMA homopolymer (ii) prepared in the above step 1 of the above polymer synthesis example 1 was dissolved in 200 ml of tetrahydrofuran (THF), and then 3.05 g of 3,4-dihydro-2H-pyran was added (3,4-Dihydro-2H-pyran) and a catalytic amount of trifluoroacetic acid (trifluoroacetic acid), stirred at room temperature for two days. After confirming the termination of the reaction by 1H NMR, the obtained polymerization solution was dropped into n-hexane (n-hexane) as a precipitation solvent to perform a precipitation reaction. The obtained precipitate was filtered under reduced pressure by using a vacuum filter, and 15.5 g of polymer (1d) was prepared by drying under reduced pressure for one day.

[0150]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a resist polymer as a homopolymer of adamantyl (meth)acrylate including hydroxyl groups, wherein the hydroxyl groups in the homopolymer are partially or entirely substituted with acetyl groups; and a resist composition comprising the resist polymer. Therefore, the resist polymer prevents the decrease in thickness and thus deterioration in etching resistance of a resist in pattern formation using lithography and, particularly, in pattern formation by a NPD process, so that the resist polymer is useful for the formation of a micro resist pattern having excellent sensitivity and resolution and is also excellent in a contrast improvement effect.

Description

technical field [0001] The present invention relates to a resist polymer useful for patterning by photolithography, and a resist composition containing the polymer. Background technique [0002] Recently, in lithography technology, mass production (HVM, high volume manufacturing) using ArF immersion lithography technology (immersion) is being actively carried out, and technology development for realizing a line width of 50 nm or less is mainly carried out. In particular, research on negative-tone development (NTD, negative-tone development) has been actively conducted as a method for realizing a contact hole pattern with a line width of 30 nm. [0003] Negative-tone development (NTD, negative-tone development) is an image inversion technology that obtains excellent image quality through a bright field mask for printing a critical dark field layer. NTD resists generally utilize resins containing acid-labile groups and photoacid generators. Upon exposure of the NTD resist to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/00
CPCG03F7/004G03F7/0045G03F7/038G03F7/20G03F7/2039G03F7/26
Inventor 朱炫相金三珉裴昌完任铉淳
Owner SK MATERIALS PERFORMANCE CO LTD