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NAND flash memory-oriented page replacement method

A page replacement and flash memory technology, applied in the field of page replacement for NAND flash memory, can solve the problems of insufficient consideration of cache page access frequency, hit rate drop, I/O performance damage, etc. Cache hit ratio, reducing the effect of wipe operations

Active Publication Date: 2017-01-04
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these algorithms still have their own problems
For example, CFLRU does not fully consider the access frequency of cached pages, which may cause cold and clean pages to be unable to be replaced out of the cache in time, resulting in cache pollution
CCFLRU and PTLRU replace clean pages in a more aggressive way. However, they can easily cause hot clean pages to not be identified and stored in the cache, which may lead to a significant drop in hit rate, which will impair the final I / O performance.
In summary, the existing various cache page replacement algorithms have the above-mentioned defects and cannot improve the I / O performance of flash-based storage systems very well.

Method used

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  • NAND flash memory-oriented page replacement method

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Embodiment Construction

[0042] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0043] At first provide the definition of relevant concept of the present invention:

[0044] Cache page: the basic read and write unit of the cache, generally consistent with the physical page size of the flash memory;

[0045] Such as figure 1 As shown, the read and write operation process of the present invention is divided into the following steps:

[0046] (1) When an I / O request P arriv...

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PUM

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Abstract

The present invention discloses an NAND flash memory-oriented page replacement method, belonging to the field of data storage. According to the method, a cold clean page linked list and another hybrid page linked list respectively manage cold clean pages and other cache pages, and a reserved ghost page linked list records metadata information of recent obsolete cache pages; before page visit processing, initialization is performed first, if the page is hit in another hybrid page linked list or the cold clean page linked list, the page is marked a hot page and is moved to a recently visited terminal of another hybrid page linked list; if the page is hit in the ghost page linked list, record of the page in the ghost page linked list is deleted, a new cache page is allocated to the page and is marked a hot page, and the page is moved to the recently visited terminal of another hybrid page linked list; and finally, if it is determined that the page is read or write request, the data is read or written in the cache page and is returned. Through adoption of the method, flash memory write operation is reduced, and a higher cache hit ratio is maintained as far as possible.

Description

technical field [0001] The invention belongs to the field of data storage, and more specifically relates to a page replacement method for NAND flash memory. Background technique [0002] NAND flash memory (flash memory) is a non-volatile storage medium proposed by Toshiba Corporation in 1989, which has the advantages of high performance, high density, good shock resistance, and low power consumption. Therefore, NAND flash memory is widely used in embedded devices, portable computers. With the rapid development of NAND flash memory technology, it is also widely used in enterprise-level storage systems. For simplicity, the flash memory mentioned later in this article defaults to NAND flash memory unless otherwise specified. [0003] Cache plays an extremely important role in the storage system. By storing hot data in a small-capacity cache, the performance of the storage system can be significantly improved. For decades, researchers have proposed various page replacement al...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02G06F12/121
CPCG06F12/0246G06F12/121
Inventor 王芳冯丹华宇李楚
Owner HUAZHONG UNIV OF SCI & TECH
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