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Via manufacturing method and display substrate manufacturing method

A production method and technology for display substrates, which are applied in the fields of semiconductor/solid-state device manufacturing, electrical components, and electrical solid-state devices, etc., can solve problems such as low yield of display substrates, and achieve the effects of preventing wire breakage and improving yield.

Active Publication Date: 2017-01-04
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a method for manufacturing a via hole and a method for manufacturing a display substrate, which are used to solve the technical problem of low yield of the display substrate due to the large slope angle of the via hole

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  • Via manufacturing method and display substrate manufacturing method
  • Via manufacturing method and display substrate manufacturing method
  • Via manufacturing method and display substrate manufacturing method

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Embodiment Construction

[0028] In order to further illustrate the manufacturing method of the via hole and the manufacturing method of the display substrate provided by the embodiments of the present invention, the detailed description will be described below in conjunction with the accompanying drawings.

[0029] see figure 1 , the manufacturing method of the via hole provided by the embodiment of the present invention includes:

[0030] Step S100, forming a photoresist on the thin film to be made via;

[0031] Step S200, exposing the photoresist n times to form an exposure area, the exposure area corresponds to the via hole, wherein the photoresist is exposed each time, and the sum of the exposure thickness of the photoresist is equal to the initial thickness of the photoresist, And the wavelength of light used in the i-th exposure is smaller than the wavelength of light used in the i-1th exposure, n≥2, 2≤i≤n;

[0032] Step S300 , etching the area of ​​the thin film corresponding to the exposure ...

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Abstract

The invention discloses a via manufacturing method and a display substrate manufacturing method, wherein the via manufacturing method and the display substrate manufacturing method relate to the field of display technology. The via manufacturing method and the display substrate manufacturing method settle a problem of relatively low display substrate yield caused by relatively large slope angle of the via. The via manufacturing method comprises the steps of forming photoresist on a film on which vias are to be manufactured; performing n times of exposure on the photoresist, thereby forming an exposure area which corresponds with the vias, wherein in each time of performing exposure on the photoresist, the sum of exposure thicknesses of the photoresist is equal with the initial thickness of the photoresist, and furthermore in i-th time of exposure, the wavelength of adopted light is smaller than that of the adopted light in (i-1)th time of exposure, n>=2 and 2<=i<=n; and etching the area which corresponds with the exposure area in the film, thereby forming the vias. The via manufacturing method provided by the invention is used for manufacturing the vias.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a via hole and a method for manufacturing a display substrate. Background technique [0002] At present, in the manufacturing process of the display substrate, it is usually necessary to make via holes in the film between two conductive layers of different layers, so as to realize the connection of the two conductive layers located in different layers. In the prior art, when making a via hole, usually a photoresist is formed on the film to be made via, and then the photoresist is exposed once to form an exposure area, the exposure area corresponds to the via hole, and then the film and the exposure area are exposed. Corresponding regions are etched to form via holes. When the above method is used to make via holes, since the photoresist is exposed, the hole wall of the hole-like structure formed in the photoresist has a relatively large slope toward t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/77H01L23/538H01L27/12
CPCH01L21/768H01L21/77H01L23/538H01L27/12
Inventor 苏同上王东方杜生平袁广才
Owner BOE TECH GRP CO LTD