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Fast charging MOSFET packaging structure for improving heat dissipation efficacy

A packaging structure and efficiency technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of poor heat dissipation performance, and achieve the effects of avoiding avalanche phenomenon, prolonging service life and high power conversion efficiency

Inactive Publication Date: 2017-01-04
武汉晶亮电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, existing power device packages have poor heat dissipation performance to varying degrees

Method used

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  • Fast charging MOSFET packaging structure for improving heat dissipation efficacy
  • Fast charging MOSFET packaging structure for improving heat dissipation efficacy
  • Fast charging MOSFET packaging structure for improving heat dissipation efficacy

Examples

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Embodiment Construction

[0044] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0045] In this embodiment, the fast charge MOSFET package structure provided by the present invention that can improve heat dissipation performance includes a power device, a first heat dissipation substrate, and a second heat dissipation substrate;

[0046] Wherein, the power device is arranged on the first heat dissipation substrate; the collector of the power device is connected to the first heat dissipation substrate;

[0047] The source of the power device is connected to the second heat diss...

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Abstract

The invention provides a fast charging MOSFET packaging structure for improving heat dissipation efficacy. The packaging structure includes a power device, a first heat dissipation substrate and a second heat dissipation substrate. The power device is arranged on the first heat dissipation substrate. The power device has a collector electrode which is connected to the first heat dissipation substrate and a source electrode which is connected to the second heat dissipation substrate. The packaging structure also includes a supporting plate which is provided with the first heat dissipation substrate and the second heat dissipation thereon. The first heat dissipation substrate has an area larger than that of the second heat dissipation substrate. According to the invention, the heat initially generated by the power device is timely eliminated, so that the power device can operate in a low temperature environment, and packaging structure can also maintain blocked impedance and higher power conversion efficiency.

Description

technical field [0001] The invention relates to power device packaging, in particular to a fast-charging MOSFET packaging structure capable of improving heat dissipation performance. Background technique [0002] In fast charging applications, the conduction loss and switching loss of power devices will be expressed in the form of heat, which will increase the chip temperature. As the temperature of the power device rises, the impedance in it will rise accordingly, and more heat will be generated, and so on. When it rises to a certain height, the high temperature protection of the system will be triggered, causing the system to derate or stop working. A good power device package must be able to conduct and remove the heat generated during the operation of the power device in a timely manner. [0003] However, existing power device packages all have poor heat dissipation performance to varying degrees. Traditional packaging methods for semiconductor power devices are only d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/42H01L23/31
CPCH01L23/31H01L23/3672H01L23/42H01L2224/0603H01L2224/48247H01L2224/49171
Inventor 廖奇泊徐维
Owner 武汉晶亮电子科技有限公司
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