Method and device for writing MLC STT-MRAM data, method and device for reading data

A data writing and data technology, applied in the field of memory, can solve the problems of poor efficiency and effect, achieve data optimization, reduce writing energy consumption, and reduce energy consumption

Inactive Publication Date: 2017-01-11
STATE GRID OF CHINA TECH COLLEGE
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Problems solved by technology

However, the above method only considers a single factor to optimize STT-

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  • Method and device for writing MLC STT-MRAM data, method and device for reading data
  • Method and device for writing MLC STT-MRAM data, method and device for reading data
  • Method and device for writing MLC STT-MRAM data, method and device for reading data

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[0046] The present invention will be further described below in conjunction with the drawings and embodiments:

[0047] Under the premise that the decoded data is the same as the original data: the coding and writing steps of MLC STT-MRAM data are:

[0048] 1) New data is written back to the main memory from the cache, and is first transferred to the write queue for writing. The width of the data to be written is the size of a cache line. When a certain data in the write queue is to be written to the memory, the memory controller will first read the old data at the corresponding address, and then compare it with the new data to be written.

[0049] 2) By comparing the new and old data to obtain the number of the hard area magnetization state of the changed cell and the number of the unchanged cell hard area magnetization state for each data state written, eight values ​​need to be obtained, namely the data state of the new data written The number of changed hard area magnetization s...

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Abstract

The invention discloses a method and device for writing MLC STT-MRAM data, and a method and device for reading the data, wherein the method for writing the MLC STT-MRAM data comprises the steps that new data is transmitted to the write queue of MLC STT-MRAM from a buffer to wait for a write; the number of changing the magnetization state of the cell hard region by each data state when the MLC STT-MRAM is written and the corresponding mapping type are obtained through comparison of the new data and the old data; the mapping type that the number of the changes required by the magnetization state of the MLC STT-MRAM hard region is minimum is selected to serve as a remapping mode, and the remapping mode is used for numerically remapping the new data; according to a corresponding write strategy, the obtained data and mapping type after remapping is written to the MLC STT-MRAM together.

Description

technical field [0001] The invention belongs to the field of memory, and in particular relates to an MLC STT-MRAM data writing method and device, and a data reading method and device. Background technique [0002] MLC is the abbreviation of Multi-level Cell (multi-level cell), that is, two or more bits are stored in one memory cell, and STT-MRAM is Spin-Transfer Torque Magnetic Random AccessMemory (spin magnetic memory) Abbreviation. [0003] The data in MLC STT-MRAM is stored in MTJ, the full name is magnetic tunneling junction (magnetic tunnel junction). There are two main designs of MLC STT-MRAM, one is parallel MTJ design and the other is continuous MTJ design. Since STT-MRAM with parallel MTJ design is superior to STT-MRAM with continuous MTJ design in terms of energy consumption and reliability, most researches focus on the former. The parallel MTJ is composed of a reference layer (reference layer) with a fixed magnetization direction and a free layer (free layer) w...

Claims

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Application Information

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IPC IPC(8): G11C11/16
CPCG11C11/16G11C11/1673G11C11/1675
Inventor 王涛郭婷董海涛牛林马志广王玉莹崔梅英何登森吕强林桂华韩冬
Owner STATE GRID OF CHINA TECH COLLEGE
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