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Charge pump control circuit structure for embedded flash memory

A charge pump control and circuit structure technology, applied in the field of charge pump control circuit and control circuit, can solve the problems of inability to dynamically apply the application environment, too long circuit waiting time, affecting chip performance, etc.

Active Publication Date: 2017-01-11
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the problem with this method is that the fixed time difference in practical applications cannot adapt to the actual situation under different process, temperature, and voltage conditions, and can only be conservatively estimated, resulting in excessively long circuit waiting time, which affects the The performance of the entire chip, at the same time, cannot be dynamically applied to different application environments

Method used

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  • Charge pump control circuit structure for embedded flash memory
  • Charge pump control circuit structure for embedded flash memory
  • Charge pump control circuit structure for embedded flash memory

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Embodiment Construction

[0029] Embodiments embodying the features and advantages of the present invention will be described in detail in the following description. It should be understood that the invention can have various changes in different examples without departing from the scope of the invention, and that the descriptions and illustrations therein are illustrative in nature rather than limiting the invention.

[0030] As mentioned above, the charge pump control unit included in the present invention is used to establish the voltage of the positive pressure charge pump generating positive high voltage and the negative pressure charge pump generating negative high voltage through the pumping clock; the charge pump control unit is based on the flash memory The dynamic power consumption configuration information and the positive charge pump and negative charge pump enable signals provided outside the circuit control the effectiveness of the pump clock, and detect the output voltage of the positive ...

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Abstract

The invention provides a charge pump control circuit structure for an embedded flash memory. The structure comprises a charge pump control unit, wherein the charge pump control unit comprises a positive-voltage charge pump voltage detection circuit, a negative-voltage charge pump voltage detection circuit, a charge pump enable signal generation circuit, a pumping pressure clock frequency dividing circuit and a charge pump pumping-pressure clock source generation circuit; a pumping-pressure clock is effectively controlled according to dynamic power consumption configuration information externally provided by a flash memory circuit and enable signals of the positive-voltage charge pump and the negative-voltage charge pump, the state of the positive-voltage charge pump and the state of the negative-voltage charge pump are respectively determined by detecting the output voltage of the positive-voltage charge pump and the output voltage of the negative-voltage charge pump, a pumping-pressure clock frequency control flow is set for the positive-voltage charge pump and negative-voltage charge pump so as to respectively control the pumping-pressure clock frequency in a voltage establishing process, and the dynamic power consumption of positive-voltage and negative voltage charge pumps is respectively and independently controlled in real time so as to control the dynamic power consumption of the embedded flash memory when the output voltage of the charge pumps is established.

Description

technical field [0001] The invention belongs to the field of electronic circuits and relates to a control circuit, in particular to a charge pump control circuit of an embedded flash memory. Background technique [0002] A flash memory (Flash Memory, referred to as a flash memory) is a non-volatile memory (Non-Volatile Memory, referred to as NVM). Embedded flash memory is a type of flash memory that can be integrated in other designs. It can locate the internal storage unit by controlling the address, and read data through low data bit width. The reading method is common to on-chip random access memory. [0003] In practical applications, embedded flash memory is widely used in active devices and non-active devices, for example, it is usually applied in a system on chip (System On Chip, SOC chip for short). [0004] Active devices usually refer to access to the power supply network, which has high performance requirements and slightly lower power consumption requirements. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/30
Inventor 洪亮金建明
Owner SHANGHAI HUALI MICROELECTRONICS CORP