Method for forming fin field effect transistor

Abstract

The invention provides a forming method of a fin type field effect transistor. The forming method comprises: a semiconductor substrate is provided, wherein a plurality of fin parts are arranged on the surface of the semiconductor substrate; isolation structures are formed on semiconductor substrate surfaces between adjacent fin parts, wherein the surfaces of the isolation structures are lower than the top surfaces of the fin parts; a gate structure stretching across the fin parts is formed, wherein the gate structure covers the tops and side walls of the partial fin parts; first ions are injected into the isolation structures by means of first ion injection into the isolation structures and the first ions diffuse and enter the fin parts at the two sides of the isolation structures, so that first lightly doped regions are formed at the bottoms of the fin parts; after first ion injection, source and drain regions are formed on the fin part surfaces at the two sides of the gate structure; and third ion injection is carried out and second light doped regions are formed in the fin parts, wherein the second light doped regions are located between the source and drain regions and the first lightly doped regions. With the method, the performance of the fin type field effect transistor is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a fin field effect transistor. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and source and drain regions located in the semiconductor substrate on both sides of the gate structure. MOS transistors generate switching signals by applying a voltage to the gate and regulating the current through the channel at the bottom of the gate structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) is an emerging multi-gate device, which generally includes a...

AI Technical Summary

Problems solved by technology

[0005] FinFETs formed with prior art techniques suffer from poorer performance and reliability as feature sizes shrink further

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