Phase change memory readout circuit and its data readout method

Abstract

The invention provides a reading circuit of a phase change memory and a method for reading data in the same. The reading circuit of the phase change memory at least comprises a pre-charge voltage generating module, a control module, a pre-charge module and a sensitive amplifier module. The pre-charge voltage generating module is used for presetting and generating a pre-charge voltage; the control module is used for generating pre-change signals after external read enable signals are received; the pre-charge module is connected with m local bit lines, the pre-charge voltage generating module and the control module and is used for simultaneously charging the m local bit lines according to the pre-charge signals until voltages of the m local bit lines reach the pre-charge voltage and stopping pre-charging the m local bit lines after the pre-charge signals are terminated; the sensitive amplifier module is connected with read bit lines and is used for reading the data stored in selected phase change memory units after the local bit lines stop being pre-charged. The reading circuit and the method have the advantages that the data can be read in relatively short random reading time, and the reading correctness and the reading margin are taken into account.

Description

Technical field [0001] The present invention relates to the technical field of integrated circuits, in particular to a phase change memory readout circuit and a data readout method thereof. Background technique [0002] Phase change memory (Phase Change Memory, PCM) is a memory based on the Ovshinsky electronic effect proposed by Ovshinsky in the late 1960s. Its working principle is to use phase change materials processed to nanometers in crystalline and amorphous states. Different resistance states to achieve data storage. As a new type of memory, phase change memory is considered to be the most developed by the industry due to its fast read and write speed, high rewritable durability, long information retention time, high storage density, low read and write power consumption, and non-volatile properties. One of the potential next-generation memories. [0003] Phase change memory uses chalcogenide compound material as storage medium, and uses Joule heat generated by electric pul...

AI Technical Summary

Problems solved by technology

But before reading, the read address is unknown, and the pre-charging period should be counted into the read time, which also causes the data read time to be too long

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