Semiconductor structure and preparation method

A technology of semiconductors and nitride semiconductors, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of semiconductor-on-insulator structure preparation methods that need to be improved, and achieve the effect of reducing intelligent stripping technology and reducing production costs

Active Publication Date: 2020-06-02
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the current semiconductor-on-insulator structures and their fabrication methods still need to be improved

Method used

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  • Semiconductor structure and preparation method
  • Semiconductor structure and preparation method
  • Semiconductor structure and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0079] (1) Using metal-organic chemical vapor deposition technology, trimethylaluminum (TMG), trimethylgallium and ammonia gas as the gas source, with an 8-inch silicon polished wafer as the substrate, first epitaxially form an AlN / AlGaN multilayer structure For the nitride transition layer, the substrate temperature is 1200 degrees Celsius during epitaxy, and a nitride transition layer with a thickness of about 3 microns is formed. Then, in the same equipment, a nitride semiconductor layer (AlN) of about 300 nm was formed at 1200 degrees Celsius. Then, the surface of the wafer is polished and cleaned to improve the flatness of the aluminum nitride surface, which is beneficial for subsequent bonding. In this way the first complex is obtained.

[0080] (2) Carry out hydrogen ion implantation to the first composite body, the implantation dose is 5×10 17 / cm 2 , the implantation depth is 180nm.

[0081] (3) Using another 8-inch silicon polished wafer as a substrate, a 10nm-th...

Embodiment 2

[0084] (1) Using metal-organic chemical vapor deposition technology, trimethylaluminum (TMG), trimethylgallium and ammonia gas as the gas source, with an 8-inch silicon polished wafer as the substrate, first epitaxially form an AlN / AlGaN multilayer structure For the nitride transition layer, the substrate temperature is 1100 degrees Celsius during epitaxy, and a nitride transition layer with a thickness of about 3 microns is formed.

[0085] (2) Polishing and cleaning the surface of the wafer to improve the flatness of the surface of the nitride transition layer and facilitate subsequent bonding. Continue to use metal organic chemical vapor deposition technology, raise the temperature to 1050 degrees Celsius, and form a GaN ion adsorption layer with a thickness of about 20nm. In the same equipment, the temperature was raised to 1100 degrees Celsius, forming a nitride semiconductor layer (AlN) about 80nm thick. In this way the first complex is obtained.

[0086] (3) Carry out...

Embodiment 3

[0090] Steps (1) and (2) are the same as in Embodiment 2.

[0091] (3) The first complex is formed in an atomic layer deposition system to form silicon nitride with a thickness of about 2 nm as the first passivation layer. In this way a first composite body with a first passivation layer is obtained.

[0092] (4) Carry out hydrogen ion implantation to the first composite body, the implantation dose is 1×10 17 / cm 2 , the implantation depth is 100nm.

[0093] (5) Take another 8-inch silicon polished wafer as the substrate, and form 10nm thick SiO on the surface of the substrate by thermal oxidation at 1000 degrees Celsius 2 Insulation. The first complex is bonded to the substrate to obtain the second complex (including substrate / nitride transition layer / GaN ion adsorption layer / nitride semiconductor layer / first passivation layer / SiO 2 insulating layer / Si substrate). Among them, SiO 2 The insulating layer is in contact with the first passivation layer.

[0094] (6) Micro...

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Abstract

The invention discloses a semiconductor structure and a preparation method thereof. The method comprises that (1) a nitride transition layer and a nitride semiconductor layer are formed in the upper surface of a base successively, so that a first complex is obtained; (2) ions including hydrogen ions are injected into the first complex; (3) the first complex is bonded to a substrate to obtain a second complex, the upper surface of the substrate includes an insulating layer, and the insulating layer makes contact with the nitride semiconductor layer in bonding; and (4) the second complex is peeled to obtain a third complex and the semiconductor structure. The nitride semiconductor layer is formed by an Al included nitride semiconductor material. The method is simple in operation steps, and has relatively low requirements for instruments and equipment, and the problem that the too small wafer size limits the size of the semiconductor structure when alumni nitride wafers are prepared can be solved.

Description

technical field [0001] The invention relates to the field of semiconductor technology and semiconductor manufacturing, in particular, the invention relates to a semiconductor structure and a preparation method. Background technique [0002] Aluminum nitride (AlN) is widely used in various semiconductor devices due to its wide direct band gap, good thermal conductivity, small thermal expansion coefficient, good mechanical properties and dielectric properties. Devices, terahertz high-frequency devices and other applications have broad prospects. With the development of semiconductor technology, the feature size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been continuously reduced and its operating speed has been continuously increased. However, silicon integrated circuits based on "Moore's law" (Moore's law) have developed rapidly for decades. For Si-based materials, current MOSFET devices are close to the dual limits of physics and technology. Therefor...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/02H01L21/265
CPCH01L21/02458H01L21/0254H01L21/02656H01L21/265
Inventor王敬孙川川梁仁荣许军
OwnerTSINGHUA UNIV