A nonvolatile dual-in-line memory and storage method

A dual-in-line, non-volatile technology, applied in instruments, measuring devices, electrical digital data processing, etc., can solve problems such as high cost, high heat generation, and reduced memory performance, and achieve the effect of reducing prices

Inactive Publication Date: 2017-02-15
SHANGHAI XINCHU INTEGRATED CIRCUIT
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Problems solved by technology

However, the traditional NVDIMM also has its disadvantages. For example, it is a symmetrical design, that is, in order to completely back up all the data in the DRAM, the storage capacity of the NVM must be greater than or equal to the capacity of the DRAM, so the cost will become very large, and a capacity is required. A very large supercapacitor is used to complete the data backup in DRAM, which will bring a lot of heat and greatly reduce the performance of the memory

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  • A nonvolatile dual-in-line memory and storage method
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Embodiment Construction

[0032] It should be noted that, in the case of no conflict, the following technical solutions and technical features can be combined with each other.

[0033] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0034] This embodiment proposes an implementation method of an asymmetric NVDIMM. as attached figure 2 As shown, the asymmetric NVDIMM is composed of DRAM, NVM, supercapacitor and control module. DRAM is used as system memory to cache data, and NVM is used to back up data that will not be saved to back-end storage after power failure. Its capacity is smaller than that of DRAM. It can be NAND Flash (flash memory), PCM (Phase Change Memory, phase change memory), etc. The supercapacitor is used to maintain the power of the instantaneous data transfer process after power failure, and the control module is used to select the memory access unit that needs to be backed up. The DRAM in the asymmetric NV...

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Abstract

The invention relates to the field of nonvolatile storage and in particular provides a nonvolatile dual-in-line memory and storage method. According to the invention, when a system suffers power failure, the NVM capacity for data backup is greatly less than that of the conventional NVDIMM, so that the price of the NVDIMM, the capacity of super-capacitors, and the calorific value can be greatly reduced, which are a great improvement for a data center employing a great number of NVDIMMs.

Description

technical field [0001] The invention relates to the field of nonvolatile storage, in particular to a nonvolatile dual in-line memory and a storage method. Background technique [0002] DRAM (Dynamic Random Access Memory), that is, dynamic random access memory, is the most common system memory due to its simple structure. It is widely used in data centers (Data Center) and IMC (Intelligent Management Center, Intelligent Management Center), and with the advent of the era of big data (Big Data), its capacity will become even greater. However, DRAM also has some disadvantages. Due to its charge storage mechanism, DRAM can only hold data for a short time, so in order to keep data, DRAM must be refreshed every once in a while. Refresh, the stored information will be lost. [0003] In order to solve the shortcoming of data loss when DRAM is powered off, the current solution on the market is to use NVDIMM (Non-volatile Dual-Inline-Memory-Modules, non-volatile dual-inline-memory-mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06G06F1/26
CPCG06F3/0619G06F1/263G06F3/065G06F3/0653G06F3/0679
Inventor 景蔚亮黄添益陈邦明
Owner SHANGHAI XINCHU INTEGRATED CIRCUIT
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