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Driving method of image sensor

A technology of an image sensor and a driving method, which is applied in the direction of image communication, color TV parts, TV system parts, etc., and can solve problems such as poor image quality

Active Publication Date: 2017-02-15
SHANGHAI IRAY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a driving method for an image sensor, which is used to solve the problems of poor image quality caused by afterimage and crosstalk of the image sensor in the prior art.

Method used

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Experimental program
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Embodiment 1

[0050] Such as figure 1 Shown is a schematic structural view of a flat panel detector, which includes pixel units 2 arranged in a two-dimensional array. In this embodiment, the pixel units 2 form an array of 2 rows and 2 columns. The pixel unit 2 includes a switch element and a photodiode PD. In this embodiment, the switch element is a thin film transistor TFT. The cathode of the photodiode PD is connected to the source of the thin film transistor TFT as a pixel electrode; the gates of the thin film transistors TFT located in the same row are connected to the same scanning line 3, and the gates of the thin film transistor TFT located in the same column The drains are connected to the same data line 4 , and the anodes of the photodiodes PD are connected to the common electrode 5 .

[0051] Such as Figure 4 Shown is the relationship between the source-drain current Ids and the gate-source voltage Vgs of a conventional N-type amorphous silicon thin film transistor (the figure...

Embodiment 2

[0064] The first embodiment takes an N-type thin film transistor as an example, and this method is also applicable to a P-type switching element. In this embodiment, a P-type thin film transistor is taken as an example, and its principle is basically the same as that of the embodiment, except that the N-type thin film transistor is replaced by a P-type thin film transistor.

[0065] The conduction characteristics of the P-type thin film transistor are as follows: when VgsVth, the thin film transistor is in an off state. In this embodiment, the potential Vcom of the common electrode 5 is a positive potential, taking 8V as an example.

[0066] Reset phase: the switching element is turned on by reducing the gate voltage of the switching element to perform a reset operation.

[0067] Waiting for exposure stage: reducing the gate potential of the switching element to a set potential, at which time the switching element is still in the off state, and the set potential is lower than...

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Abstract

The invention provides a driving method of an image sensor. The method includes: switch elements are turned on, residual signals in a pixel unit are released, and the switch elements are turned off; the grid potentials of the switch elements are set as the set potential, and the switch elements are still in the turn-off states; an X-ray is irradiated to the pixel unit, the potential of a pixel electrode is stabilized within the set potential; and after the end of exposure, each switch element is turned off, the switch elements are turned on line by line, and charges stored in capacitors of photodiodes are read out line by line. According to the method, during exposure, residual charges are leaked, two terminals of the photodiode always maintain a voltage difference, electrons are not trapped by defects, and the problem of ghost shadow can be fundamentally solved; besides, after the end of exposure, when a certain line is read out, the leakage current of film transistors in other lines is enabled to be in the lowest state through the adjustment of the grid voltage, the crosstalk problem is eliminated, and the image quality can be greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a driving method of an image sensor. Background technique [0002] Flat panel image sensors are widely used in medical radiation imaging, industrial flaw detection, security inspection and other fields. Flat-panel image sensors, especially large-scale image sensors, have an area of ​​tens of centimeters and millions to tens of millions of pixels, usually using amorphous silicon technology. [0003] A flat-panel image sensor generally includes: a substrate 1 (may be glass or plastic, etc.), on which all sensors are placed; pixel units 2, which are arranged in a two-dimensional array on the substrate 1 Each pixel unit 2 includes a photodiode PD (PhotoDiode) and a thin film transistor TFT (Thin Film Transistor); used to control the scan line 3 and data line 4 of each pixel 2; and used to provide the photodiode PD Voltage common electrode 5. Applying a negative voltage (suc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/335H04N5/359H04N25/00
Inventor 金利波郑金磊黄细平方志强
Owner SHANGHAI IRAY TECH
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