Grid electrode driving circuit with forward and reverse scanning function
A gate drive circuit, forward and reverse scanning technology, applied to instruments, static indicators, etc., can solve the problems that the forward and reverse scanning modules do not have the function of maintaining the pull-up control node, and the gate drive circuit is easy to fail. The effect of improving the negative pressure stress of the gate and improving the reliability
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[0014] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0015] The basic structure of the gate drive circuit with forward and reverse scanning functions described in the present invention is as follows: figure 2 As shown, it includes forward and reverse scan module 1 , pull-up module 2 , sustain module 3 and bootstrap capacitor 4 . Forward and reverse scanning module 1 is composed of four thin film transistors: the first thin film transistor M1, the second thin film transistor M2, the third thin film transistor M3 and the fourth thin film transistor M4. M1 and M2 are responsible for forward scanning driving, and M3 and M4 are responsible for reverse scanning. to the scan driver. When U2D is at high potential and D2U is at low potential, forward scan driving is performed; when U2D is at low potential and D2U is at high potential, reverse scan driving is performed. The two control...
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