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Methods and apparatus for depositing a cobalt layer using a carousel batch deposition reactor

A cobalt layer and substrate technology, applied in the field of substrate processing methods and substrate processing equipment, can solve the problems of long time consumption, high cost, no annealing ability, etc.

Active Publication Date: 2017-03-01
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, conventional CVD chambers may not have annealing capabilities, requiring the substrate to leave the deposition chamber for annealing, and then return to the CVD chamber for additional deposition
Therefore, several deposition steps and annealing steps performed before filling the opening with cobalt will take a long time period, resulting in a low yield and high cost process

Method used

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  • Methods and apparatus for depositing a cobalt layer using a carousel batch deposition reactor
  • Methods and apparatus for depositing a cobalt layer using a carousel batch deposition reactor
  • Methods and apparatus for depositing a cobalt layer using a carousel batch deposition reactor

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Embodiment Construction

[0015] Provided herein are methods and apparatus for depositing cobalt in features formed on a substrate. According to an embodiment of the present disclosure, cobalt is deposited in the openings in the thin layer and then annealed to drive the impurities out. The inventive methods and apparatus described herein advantageously combine the deposition process and the annealing process in a single chamber in order to improve cycle times and increase throughput. The inventive methods described herein can be used in the formation of metal interconnects in integrated circuits, as well as other suitable applications, including depositing cobalt fill layers with improved cycle times and increased throughput.

[0016] figure 1 is a flowchart of a method 100 for depositing cobalt according to some embodiments of the present disclosure. The following for Figure 2A-2B The various stages of filling the feature with cobalt are depicted to describe the method 100 .

[0017] The method b...

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Abstract

Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate; (c) rotating the substrate to a second processing position; and (d) annealing the substrate at the second processing position to remove contaminants from the cobalt layer.

Description

technical field [0001] Embodiments of the present disclosure relate generally to substrate processing methods and substrate processing apparatus, and more particularly to methods and apparatus for depositing cobalt on a substrate. Background technique [0002] The inventors have observed that chemical vapor deposition (CVD) of cobalt can be used as a metal deposition technique for applications such as forming metal interconnects in integrated circuits. CVD cobalt can be deposited in openings in thin layers, such as vias or trenches, and then annealed at about 250 degrees Celsius to about 450 degrees Celsius to drive out impurities such as carbon, hydrogen, and oxygen. The deposition step and annealing step can be repeated several times to fill the opening with cobalt. However, conventional CVD chambers may not have annealing capabilities, requiring the substrate to leave the deposition chamber for annealing, and then return to the CVD chamber for additional deposition. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/06C23C16/14C23C16/56
CPCC23C16/045C23C16/16C23C16/18C23C16/46C23C16/56C23C16/45565C23C16/4584C23C16/4586C23C16/463
Inventor 玛于·特里维迪
Owner APPLIED MATERIALS INC