Manufacturing method of mask structure

A manufacturing method and mask technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that the mask is easy to be stained with particles or impurities, affect the quality of the mask, and achieve the effect of improving quality

Active Publication Date: 2019-05-28
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the masks manufactured by the existing technology are still easy to be stained with particles or impurities, thereby affecting the quality of the masks

Method used

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  • Manufacturing method of mask structure
  • Manufacturing method of mask structure
  • Manufacturing method of mask structure

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Experimental program
Comparison scheme
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Embodiment Construction

[0031] The mask plate manufactured by the prior art is easy to be stained with particles or impurities during use, combined with Figure 1 to Figure 3 Analyzing the reason why the mask is contaminated, in the mask manufacturing process, mainly includes: providing a mask and protective film device 100, the mask includes a substrate 140 and a patterned metal layer on the substrate 140; The protective film device 100 includes a protective film 110 at the top of the device, and a bracket positioned below the protective film 110. An opening 130 is formed in the side wall of one side of the bracket for separating the air pressure in the protective film device 100 from the outside world. The air pressure of the environment is the same; after the sealing tape 120 of the protective film is torn off, the substrate 140 is directly adhered to the protective film device 100, so that the patterned metal layer is in contact with the bracket to form a protective film 110. The mask plate, the p...

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Abstract

The invention provides a manufacturing method of a mask structure. The manufacturing method comprises the steps of: providing a mask plate which comprises a substrate and a pattern metal layer arranged on the substrate; providing a protective film device which comprises a bracket and a protective film adhered to the top part of the bracket, wherein the bracket comprises a plurality of supporting side walls, the plurality of supporting side walls are connected with one another to form a closed structure, and an opening is formed in one supporting side wall; placing the protective film device in an electrostatic field, and blowing a charged gas into the opening; and moving the protective film device away from the electrostatic field, and adhering the pattern metal layer on the bottom part of the bracket. Before adhering the bracket with the pattern metal layer, the gas is blown into the opening so that impurities at the opening are blown off; and the protective film device is placed in the electrostatic field generated by an electrostatic generation device, and the blown-off and charged impurities are absorbed and away from the protective film device under the action of the electrostatic field, thus the impurities at the opening are removed, and the quality of the mask plate is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for manufacturing a mask structure. Background technique [0002] The mask plate includes a substrate with light-shielding properties for exposure light, and a patterned metal layer on the substrate. The pattern metal layer includes at least one geometric figure with light-shielding properties for exposure light, which can selectively block the light from the photolithography Light on the glue to create a pattern on the photoresist. [0003] The quality of the mask plate will directly affect the quality of the formed photoresist pattern. If foreign matter is attached to the mask plate, the pattern of the foreign matter is easily transferred to the wafer, thereby affecting the performance and yield of devices on the wafer. Therefore, the prior art has higher requirements on the quality of the mask. [0004] In order to better protect the mask during use, reduce the probabi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027
Inventor 卢子轩王跃刚王清蕴
Owner SEMICON MFG INT (SHANGHAI) CORP
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