31 results about "Charged impurity" patented technology

A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and / or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.

A scalable process for fabricating graphene / hexagonal boron nitride (h-BN) heterostructures is disclosed herein. The process includes (BN)xHy-radical interfacing with active sites on silicon nitride coated silicon (Si3N4 / Si) surfaces for nucleation and growth of large-area, uniform and ultrathin h-BN directly on Si3N4 / Si substrates (B / N atomic ratio=1:1.11±0.09). Further, monolayer graphene van der Waals bonded with the produced h-BN surface benefits from h-BN's reduced roughness (3.4 times) in comparison to Si3N4 / Si. Because the reduced surface roughness leads to reduction in surface roughness scattering and charge impurity scattering, therefore an enhanced intrinsic charge carrier mobility (3 folds) for graphene on h-BN / Si3N4 / Si is found.

A scalable process for fabricating graphene / hexagonal boron nitride (h-BN) heterostructures is disclosed herein. The process includes (BN)XHy-radical interfacing with active sites on silicon nitride coated silicon (Si3N4 / Si) surfaces for nucleation and growth of large-area, uniform and ultrathin h-BN directly on Si3N4 / Si substrates (B / N atomic ratio=1:1.11±0.09). Further, monolayer graphene van der Waals bonded with the produced h-BN surface benefits from h-BN's reduced roughness (3.4 times) in comparison to Si3N4 / Si. Because the reduced surface roughness leads to reduction in surface roughness scattering and charge impurity scattering, therefore an enhanced intrinsic charge carrier mobility (3 folds) for graphene on h-BN / Si3N4 / Si is found.

The invention provides a manufacturing method of a mask structure. The manufacturing method comprises the steps of: providing a mask plate which comprises a substrate and a pattern metal layer arranged on the substrate; providing a protective film device which comprises a bracket and a protective film adhered to the top part of the bracket, wherein the bracket comprises a plurality of supporting side walls, the plurality of supporting side walls are connected with one another to form a closed structure, and an opening is formed in one supporting side wall; placing the protective film device in an electrostatic field, and blowing a charged gas into the opening; and moving the protective film device away from the electrostatic field, and adhering the pattern metal layer on the bottom part of the bracket. Before adhering the bracket with the pattern metal layer, the gas is blown into the opening so that impurities at the opening are blown off; and the protective film device is placed in the electrostatic field generated by an electrostatic generation device, and the blown-off and charged impurities are absorbed and away from the protective film device under the action of the electrostatic field, thus the impurities at the opening are removed, and the quality of the mask plate is improved.

The invention describes a method of achieving superconductivity in Group IV semiconductors via the addition of doubly charged impurity atoms to the crystal lattice. The doubly charged impurities function as composite bosons in the semiconductor. Increasing the density of the composite bosons to a level where their wavefunctions overlap, results in the formation of a Bose condensate. The concentration of the doubly charged impurity atoms in the host lattice and the binding energy of the impurities are important factors in determining whether a Bose condensate will form. Doubly charged impurities must be present in the semiconductor at a concentration at which they exhibit overlapping wavefunctions, but still exist within the crystal lattice as bosons.

The invention discloses a graphene composite material for photoconversion and energy storage and a preparation method. The method comprises the steps of: employing graphite as a raw material, firstly, infiltrating phenyl ammonium salt cations between graphite layers; introducing positively charged impurities between the graphite layers through the electrophilic effect of a pi bond between the graphite layers, blending the positively charged impurities and a metal cation salt and carrying out ion exchange reaction on a benzyl ammonium salt and the metal cation salt; and decomposing the salt through warming to obtain nano metal oxide particles under the protection of an inert gas. The problems that graphene and the oxide particles are easily agglomerated and cannot be evenly dispersed, the preparation technology is complicated, the equipment requirement is high and the like in the prior art are solved. Two processes of mechanical stripping and nano material compounding are merged into one, so that the cost is greatly reduced; the technology is simplified; and the preparation method is suitable for a continuous industrial production technology, compatible with a technology for mechanically stripping the graphene and suitable for partial established companies for direct production.

The invention discloses a dust-removing cotton fluffer. The dust-removing cotton fluffer comprises a frame, a feeding rack, a cotton feeding roller and a licker-in arranged correspondingly to the cotton feeding roller, wherein the feeding rack is arranged in front of the frame; the cotton feeding roller is arranged on the tail end of the feeding rack; a dust collection chamber is arranged under the licker-in and a fan for collecting dust is connected to the dust collection chamber. The cotton fluffer further comprises a high-voltage power source, wherein one electrode of the high-voltage power source is electrically connected with the external surface of the licker-in, while the other electrode of the high-voltage power source is electrically connected with a dust collection plate arranged in the dust collection chamber; the dust collection plate is directly arranged under the licker-in. the dust-removing cotton fluffer has the advantages that the electric-field dust removal technique is adopted on the basis of existing wind-driven dust removal so that impurities such as dust to have charges opposite to the charges of the dust collection plate in the cotton fiber release process of the licker-in, next, the charged impurities such as dust are adsorbed on the dust collection plate under the action of the electric field between the licker-in and the dust collection plate, and most dust can be removed in combination with the action of a fan, and therefore, the technical problem that the impurities cannot be removed effectively due to the electrostatic interaction is effectively solved and the cleanness of the cotton fibers is remarkably improved.

The invention provides a method for improving the effectiveness of colloidal silica. The method involves removing enough charged impurities from the colloid to prevent the charged particles from causing the colloid to become a viscous gel. The method however also involves not removing too many charged particles so the silica material doesn't gel by cross-linking with itself. This method is quite effective because it recognizes that materials that have accumulated during the formation of the colloid do perform an important function, but they can perform better at a lower concentration.

An image forming apparatus provided with a dust collecting part includes an ink cartridge having a wide array type ink jet head that is capable of ejecting ink over an entire lateral line that is perpendicular to a conveying direction of a recording medium at a time, and a main body case that supports the ink cartridge, a duct located under the wide array type ink jet head to extend in a longitudinal direction of the wide array type ink jet head; and a dust collecting part including a charging part disposed in the duct to charge impurities and electrodes disposed in the duct to adsorb the charged impurities The image forming apparatus includes a dust-collecting part that adsorbs the impurities over an entire region of the wide array type ink jet head, thereby effectively removing the impurities generated in large quantities and increasing a life span and a reliability of image forming apparatuses, since the dust collecting part is securely maintained during operation.