Method for determining contraction resistances of contact interface under different pressure intensities

Abstract

The invention discloses a method for determining the contraction resistances of a contact interface under different pressure intensities, and the method comprises the steps: carrying out the local statistic observation of the contact interface through a measurement instrument, and obtaining the information of micro-bulges which represent the actual surface shape, wherein the information comprises micro-bulge height value distribution mode, micro-bulge height standard deviation, micro-bulge surface density and micro-bulge curvature radius; finally obtaining the contraction resistances of the contact interface under different pressure intensities through the information. The method can track and obtain the state and change information of each micro-bulge on the surface, can be suitable for any micro-bulge height distribution mode, can calculate the contraction resistance under the DC condition, and also can calculate the contraction resistance of the contact interface under the AC condition. The result can be used for the research of an equivalent circuit model of a microwave part contact interface, and provides support for the research of a passive intermodulation nonlinear mechanism of a microwave part.

Description

technical field [0001] The invention relates to a method for determining the shrinkage resistance of a contact interface under different pressures, and belongs to the technical field of reliability research of space microwave components. Background technique [0002] As a typical special effect in satellite high-power systems, passive intermodulation will cause serious harm to aircraft. It has become an important factor affecting the safe and stable operation of my country's in-orbit aircraft, and it needs to be studied urgently. In the study of the contact nonlinear model of passive intermodulation of microwave components, the study of the total impedance of the contact interface is essential. Such as figure 1 (a) represents the actual contact interface, figure 1 (b) is the equivalent circuit describing the contact interface. Among the factors that make up the total resistance of the contact interface, the shrinkage resistance ( figure 1 Rc) in (b) is a very important p...

AI Technical Summary

Problems solved by technology

[0005] This calculation method is an analytical method, which includes complex integral forms, and through this calculation method, only the shrinkage resistance of the contact interface can be obtained under the DC condition, and the shrinkage resistance of the contact interface under the AC condition cannot be obtained.

At the same time, since the method is analytical, it is only applicable to the case where the quantity distribution of surface asperity height is in the form of Gaussian distribution or Weibull distribution

Images