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Semiconductor device having gate structures and manufacturing method thereof

A gate structure and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of ultra-high voltage semiconductor component size reduction and other issues

Active Publication Date: 2017-03-22
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the shrinking dimensions of ultra-high voltage semiconductor components, achieving these design goals becomes extremely challenging

Method used

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  • Semiconductor device having gate structures and manufacturing method thereof
  • Semiconductor device having gate structures and manufacturing method thereof
  • Semiconductor device having gate structures and manufacturing method thereof

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Embodiment Construction

[0119] Hereinafter, embodiments of the present invention will be explained in detail with reference to the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0120] Figure 1A to Figure 1C A semiconductor device 10 is shown in accordance with an illustrated embodiment of the present invention. Figure 1A It is a top view of the semiconductor device 10 , only showing the polysilicon layer and the oxide defined (OD) region without the field oxide layer. Figure 1B It is an enlarged top view of a region A of the semiconductor element 10 . Figure 1C for along Figure 1B A cross-sectional view of the region A of the semiconductor device 10 on the A-A' cross-section line. Figure 1D It is an enlarged top view of a region B of the semiconductor element 10 . Figure 1E for along Figure 1D The cross-sectional view of the region B of the semiconductor device 10 on the B-B' cross-section l...

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Abstract

The invention provides a semiconductor device having gate structures and a manufacturing method thereof. The semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a high-voltage doped region having the first conductivity type and disposed in the high-voltage well, a drain region disposed in the high-voltage well and spaced apart from the high-voltage doped region, a source region disposed in the high-voltage doped region, a first gate structure disposed above a first side portion of the high-voltage doped region between the source region and the drain region, and a second gate structure disposed above a second and opposite side portion of the high-voltage doped region.

Description

technical field [0001] The disclosure relates to a semiconductor device, and more particularly to a semiconductor device with a gate structure and a manufacturing method thereof. Background technique [0002] Ultra-high voltage semiconductor devices are widely used in display devices, portable devices, and many other applications. The design goals of ultra-high voltage semiconductor devices are to include high breakdown voltage, low specific on-resistance, and high reliability in both room temperature and high temperature environments. However, due to the shrinking dimensions of ultra-high voltage semiconductor devices, achieving these design goals becomes extremely challenging. Contents of the invention [0003] According to an embodiment of the present invention, a semiconductor device includes a substrate, a high voltage well, a high voltage doped region, a drain region, a source region, a first gate structure and a second gate structure. The substrate has a first con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/739H01L21/331
CPCH01L29/0615H01L29/66325H01L29/66356H01L29/7391H01L29/7393H01L29/4238H01L29/66689H01L29/063H01L29/0692H01L29/1087H01L29/402H01L29/8611H01L29/0634H01L29/7816H01L29/7831H01L29/861
Inventor 简郁芩詹景琳林正基
Owner MACRONIX INT CO LTD