Thin-film transistor, ultrasonic sensor, array substrate and display device

Abstract

The invention provides a thin-film transistor, which comprises a gate, a gate insulating layer, a channel layer, a source and a drain, wherein the gate comprises a first electrode layer, a piezoelectric layer and a second electrode layer; the first electrode layer is arranged corresponding to the channel layer to serve as a control electrode of the thin-film transistor; and the piezoelectric layer is arranged between the first electrode layer and the second electrode layer and can generate a corresponding pressure sensing signal according to a touch press operation of a sensed object. The invention further provides an ultrasonic sensor, an array substrate and a display device. Compared with the prior art, the thin-film transistor provided by the invention integrates a switching function, a pressure sensing function and an ultrasonic sensing function, and is diverse in function, simple in structure and beneficial to miniaturization development.

Description

technical field [0001] The invention relates to a thin film transistor, an ultrasonic sensor using the thin film transistor, an array substrate using the thin film transistor and a display device using the array substrate. Background technique [0002] A thin film transistor (Thin Film Transistor, TFT), as a switch component, has been widely used in fields such as sensors, displays, or touch controls. A common TFT includes a gate, a gate insulating layer, a channel layer, a source and a drain. The gate insulating layer is located between the gate and the channel layer to insulate the two from each other. The source and the drain are connected to the channel layer respectively. contact at both ends. When a voltage is applied to the gate of the TFT, an electron channel will be formed at the bottom of the channel layer, and when a voltage is also applied to the drain, electrons will flow from the source to the drain through the electron channel of the channel layer, making the...

AI Technical Summary

Problems solved by technology

The gate of this type of TFT is only used to open or close the electronic channel in the channel layer, and its function is relatively simple.

Therefore, in an electronic device, such as a mobile phone, etc., in order to realize various functions, it is usually necessary to arrange many structural parts and electronic components, thereby affecting the overall size and thickness of the electronic device.

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