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Array ultrasonic sensor and preparing method thereof

A manufacturing method, ultrasonic technology, applied in the use of sound waves/ultrasonic waves/infrasonic waves for material analysis, instruments, scientific instruments, etc., can solve the problem that the distance between ultrasonic transducer chip units cannot be reduced, the operation is troublesome, and the ultrasonic transducer chip units are easy to use. problems such as side gates

Pending Publication Date: 2017-04-26
AUDIOWELL ELECTRONICS GUANGDONG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the volume of the ultrasonic probe itself, when adjacent ultrasonic transducer chip units are arranged side by side, the distance between the ultrasonic transducer chip units cannot be reduced to half the emission signal wavelength of the transmitting unit. Side gate phenomenon is easy to occur between wafer units
In order to avoid the side grid phenomenon, it is often necessary to control the emission angle of the ultrasonic emission unit, but this operation is more troublesome

Method used

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  • Array ultrasonic sensor and preparing method thereof
  • Array ultrasonic sensor and preparing method thereof
  • Array ultrasonic sensor and preparing method thereof

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Embodiment Construction

[0024] Embodiments of the present invention are described in detail below:

[0025] Such as figure 1 , figure 2 As shown, an array ultrasonic sensor according to an embodiment of the present invention includes: a first piezoelectric vibration plate 10 , a first support plate 20 , a base plate 30 and a cover plate 40 .

[0026] The first piezoelectric vibration plate 10 has more than two first vibration regions. The first vibration area is provided with a first electrode 11 . The first support plate 20 is provided with a through hole 21 or a blind hole corresponding to the first vibration area, and the first support plate 20 is connected with the first piezoelectric vibration plate 10 . When a voltage is applied to the first piezoelectric vibration plate 10 through the first electrode 11, the first vibration region of the first piezoelectric vibration plate 10 vibrates, and the through hole 21 or blind hole provided on the first support plate 20 is equivalent to It is used...

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Abstract

The invention relates to an array ultrasonic sensor and a preparing method thereof. The array ultrasonic sensor comprises a first piezoelectric vibrating plate, a first supporting plate, a base plate and a cover plate. The first supporting plate is provided with through-holes or blind holes correspondingly arranged in first vibrating areas, and the supporting plate is connected to the first piezoelectric vibrating plate. Ultrasonic emitting holes are formed in the first vibrating areas in a one-to-one mode. Multiple partition plates placed between the adjacent first vibrating areas are arranged at the inner side wall of the cover plate. The base plate is connected to the first supporting plate, and the base plate is provided with over two control units arranged on first electrodes in a one-to-one mode. The control units, the first piezoelectric vibrating plate, the first electrodes and the first supporting plate form an independent ultrasonic sending and receiving array element, can achieve the integration of the array ultrasonic sensor, and make the interval between the adjacent first vibrating areas smaller than half a wave length of an ultrasonic launch signal; side gating phenomenon can be avoided by the ultrasonic sending and receiving array element delaying to launch ultrasonic signals, and operation is convenient.

Description

technical field [0001] The invention relates to an ultrasonic sensor, in particular to an array ultrasonic sensor and a manufacturing method. Background technique [0002] The traditional array ultrasonic sensor is formed by arranging multiple independent ultrasonic transducer wafers in an array. However, due to the volume of the ultrasonic probe itself, when adjacent ultrasonic transducer chip units are arranged side by side, the distance between the ultrasonic transducer chip units cannot be reduced to half the emission signal wavelength of the transmitting unit. Side grid phenomenon is easy to occur between wafer units. In order to avoid the side grid phenomenon, it is often necessary to control the emission angle of the ultrasonic emission unit, but this operation is more troublesome. Contents of the invention [0003] Based on this, it is necessary to overcome the defects of the prior art, and provide an array ultrasonic sensor and a manufacturing method, which can ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N29/00G01N29/22
CPCG01N29/00G01N29/22
Inventor 秦小勇张曙光
Owner AUDIOWELL ELECTRONICS GUANGDONG