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Apparatus and method for improving threshold voltage distribution of nonvolatile storage apparatus

A non-volatile storage and voltage distribution technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of difficult control of programming time and insufficient programming efficiency of programming time

Inactive Publication Date: 2017-04-26
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this regard, challenges presented by large diameters can be, for example, programming inefficiencies in terms of programming time
In addition, when a string includes memory cells of different diameters, the programming time of the string will be difficult to control

Method used

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  • Apparatus and method for improving threshold voltage distribution of nonvolatile storage apparatus
  • Apparatus and method for improving threshold voltage distribution of nonvolatile storage apparatus
  • Apparatus and method for improving threshold voltage distribution of nonvolatile storage apparatus

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Embodiment Construction

[0036] Herein, some embodiments of the present invention are described in detail with reference to the accompanying drawings, but not all embodiments are shown in the drawings. Indeed, these inventions can use many different variations and are not limited to the examples herein. Rather, the present invention provides these embodiments to meet the statutory requirements of the application. The same reference symbols are used in the drawings to designate the same or similar elements.

[0037] Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. Unless defined otherwise, all terms used herein including technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art of the invention. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings as commonly understood by those of ord...

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Abstract

The invention provides a method for controlling voltage threshold value distribution corresponding to a nonvolatile storage apparatus and a related apparatus, and a memory cell of the nonvolatile storage apparatus executes a function. In one embodiment, a method is provided. The method comprises provision of the nonvolatile storage apparatus. The apparatus comprises one or several strings, each string comprises several memory cells, and the memory cells comprise a first memory cell and a second memory cell. The method also comprises the following steps: application of a first functional voltage to the first memory cell and application of a second functional voltage to the second memory cell, in order to execute a function of the nonvolatile storage apparatus. The first functional voltage and the second functional voltage are different.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices, and more particularly, methods for improving programming threshold voltage (Vt) distribution and operations of semiconductor memory devices. Background technique [0002] Semiconductor devices are typically classified as volatile semiconductor devices (requiring power to maintain storage of data) or non-volatile semiconductor devices (retaining data even when power is removed). Non-volatile semiconductor devices are, for example, flash memory devices, which can generally be classified into NOR or NAND flash memory devices. Such flash memory devices may have memory cells or layers stacked on top of each other in a 3D architecture. When faster programming and erasing speeds are required, 3D NAND flash memory is typically used, partly because its serialized structure allows programming and erasing operations to be performed on the entire string of memory cells . In vertical NAND stri...

Claims

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Application Information

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IPC IPC(8): G11C16/34
Inventor 程政宪李致维古绍泓吕文彬
Owner MACRONIX INT CO LTD
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